Electrically Assisted Lasing in Metal Halide Perovskite Semiconductors

Alex J. Grede, Robert Cawthorn, Lianfeng Zhao, John P. Murphy, Kwangdong Roh, Khaled Al Kurdi, Stephen Barlow, Seth R. Marder, Barry P. Rand, Noel C. Giebink

Research output: Contribution to journalArticlepeer-review

Abstract

Metal halide perovskite (MHP) semiconductors offer the prospect of wavelength-tunable diode lasers fabricated on a wide range of substrates without lattice matching concerns. However, to date, all MHP lasers are optically pumped. Here, we show that electrically injected carriers can assist lasing in a MHP composition of formamidinium lead iodide and methylammonium lead bromide ((FAPbI3)0.95(MAPbBr3)0.05) under short, high current electrical pulses at low temperature. Using a distributed feedback resonator, doped organic transport layers, and a custom impulse circuit that delivers electrical pulses as short as 3 ns, we are able to inject a carrier density of approximately 6 × 1017 cm-3 at T = 230 K and show that it leads to a ∼24% reduction in the optically pumped lasing threshold when the optical pulse overlaps the first few nanoseconds of the electrical pulse. These results support the viability of MHP laser diodes and indicate that roughly an order of magnitude reduction in threshold carrier density will be required to achieve pure electrically pumped lasing in (FAPbI3)0.95(MAPbBr3)0.05 at low temperature.

Original languageEnglish
Pages (from-to)1851-1856
Number of pages6
JournalACS Photonics
Volume11
Issue number5
DOIs
StatePublished - 15 May 2024

Bibliographical note

Publisher Copyright:
© 2024 American Chemical Society.

Keywords

  • diode laser
  • MHP
  • nonepitaxial
  • stimulated emission
  • thin film

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