Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivation

U. H. Choi; S. Yoon; D. H. Yoon; Y. J. Tak; Y. G. Kim; B. D. Ahn; J. Park; H. J. Kim

doi:10.1088/0022-3727/49/28/285103

Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivation

U. H. Choi, S. Yoon, D. H. Yoon, Y. J. Tak, Y. G. Kim, B. D. Ahn, J. Park, H. J. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this study, we investigated a method of enhancing the electrical stability of GeInGaO thin-film transistors (TFTs) using a Li-doped Y₂O₃ (YO) passivation layer (PVL). Li reduced metal hydroxide groups in the PVL, and diffused into the channel layer and reduced the oxygen vacancy at the top surface of the channel layer, which is the origin of the defect state and electrical instability. In addition, the negative-bias temperature stress (NBTS) for 3600 s improved for Li-doped YO (LYO) PVL. The threshold voltage shift decreased from -10.3 V for the YO PVL to -4.8 V for the LYO PVL, a 54% improvement.

Original language	English
Article number	285103
Journal	Journal of Physics D: Applied Physics
Volume	49
Issue number	28
DOIs	https://doi.org/10.1088/0022-3727/49/28/285103
State	Published - 15 Jun 2016

Bibliographical note

Publisher Copyright:
© 2016 IOP Publishing Ltd.

Keywords

GeInGaO
diffusion
oxygen vacancy
passivation layer
thin-film transistor

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10.1088/0022-3727/49/28/285103

Cite this

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title = "Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivation",

abstract = "In this study, we investigated a method of enhancing the electrical stability of GeInGaO thin-film transistors (TFTs) using a Li-doped Y2O3 (YO) passivation layer (PVL). Li reduced metal hydroxide groups in the PVL, and diffused into the channel layer and reduced the oxygen vacancy at the top surface of the channel layer, which is the origin of the defect state and electrical instability. In addition, the negative-bias temperature stress (NBTS) for 3600 s improved for Li-doped YO (LYO) PVL. The threshold voltage shift decreased from -10.3 V for the YO PVL to -4.8 V for the LYO PVL, a 54% improvement.",

keywords = "GeInGaO, diffusion, oxygen vacancy, passivation layer, thin-film transistor",

author = "Choi, {U. H.} and S. Yoon and Yoon, {D. H.} and Tak, {Y. J.} and Kim, {Y. G.} and Ahn, {B. D.} and J. Park and Kim, {H. J.}",

note = "Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

year = "2016",

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day = "15",

doi = "10.1088/0022-3727/49/28/285103",

language = "English",

volume = "49",

journal = "Journal of Physics D: Applied Physics",

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TY - JOUR

T1 - Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivation

AU - Choi, U. H.

AU - Yoon, S.

AU - Yoon, D. H.

AU - Tak, Y. J.

AU - Kim, Y. G.

AU - Ahn, B. D.

AU - Park, J.

AU - Kim, H. J.

PY - 2016/6/15

Y1 - 2016/6/15

N2 - In this study, we investigated a method of enhancing the electrical stability of GeInGaO thin-film transistors (TFTs) using a Li-doped Y2O3 (YO) passivation layer (PVL). Li reduced metal hydroxide groups in the PVL, and diffused into the channel layer and reduced the oxygen vacancy at the top surface of the channel layer, which is the origin of the defect state and electrical instability. In addition, the negative-bias temperature stress (NBTS) for 3600 s improved for Li-doped YO (LYO) PVL. The threshold voltage shift decreased from -10.3 V for the YO PVL to -4.8 V for the LYO PVL, a 54% improvement.

AB - In this study, we investigated a method of enhancing the electrical stability of GeInGaO thin-film transistors (TFTs) using a Li-doped Y2O3 (YO) passivation layer (PVL). Li reduced metal hydroxide groups in the PVL, and diffused into the channel layer and reduced the oxygen vacancy at the top surface of the channel layer, which is the origin of the defect state and electrical instability. In addition, the negative-bias temperature stress (NBTS) for 3600 s improved for Li-doped YO (LYO) PVL. The threshold voltage shift decreased from -10.3 V for the YO PVL to -4.8 V for the LYO PVL, a 54% improvement.

KW - GeInGaO

KW - diffusion

KW - oxygen vacancy

KW - passivation layer

KW - thin-film transistor

UR - http://www.scopus.com/inward/record.url?scp=84978290999&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/49/28/285103

DO - 10.1088/0022-3727/49/28/285103

M3 - Article

AN - SCOPUS:84978290999

SN - 0022-3727

VL - 49

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 28

M1 - 285103

ER -

Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivation

Abstract

Bibliographical note

Keywords

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