Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivation

U. H. Choi, S. Yoon, D. H. Yoon, Y. J. Tak, Y. G. Kim, B. D. Ahn, J. Park, H. J. Kim

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

In this study, we investigated a method of enhancing the electrical stability of GeInGaO thin-film transistors (TFTs) using a Li-doped Y2O3 (YO) passivation layer (PVL). Li reduced metal hydroxide groups in the PVL, and diffused into the channel layer and reduced the oxygen vacancy at the top surface of the channel layer, which is the origin of the defect state and electrical instability. In addition, the negative-bias temperature stress (NBTS) for 3600 s improved for Li-doped YO (LYO) PVL. The threshold voltage shift decreased from -10.3 V for the YO PVL to -4.8 V for the LYO PVL, a 54% improvement.

Original languageEnglish
Article number285103
JournalJournal of Physics D: Applied Physics
Volume49
Issue number28
DOIs
StatePublished - 15 Jun 2016

Keywords

  • diffusion
  • GeInGaO
  • oxygen vacancy
  • passivation layer
  • thin-film transistor

Fingerprint

Dive into the research topics of 'Electrical stability enhancement of GeInGaO thin-film transistors by solution-processed Li-doped yttrium oxide passivation'. Together they form a unique fingerprint.

Cite this