Electrical properties of ZrO 2 and YSZ films deposited by pulsed laser deposition

S. H. Kim, I. S. Byun, I. R. Hwang, J. S. Kim, J. S. Choi, S. H. Kim, S. H. Jeon, S. H. Hong, J. H. Lee, B. H. Park, S. Seo, M. J. Lee, D. H. Seo, Y. S. Joung, D. S. Suh, J. E. Lee, I. K. Yoo

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9 Scopus citations


Polycrystalline ZrO 2 and yttria-stabilized ZrO 2 thin films have been deposited on Pt/Ti/SiO 2/Si substrates by pulsed-laser-deposition methods. Pt/ZrO 2/Pt and Pt/YSZ/Pt capacitor structures show giant conductivity switching behaviors which can be utilized for nonvolatile memory devices, Maximum on/off ratio of 10 6 and good endurance even after 10 5 times conductivity switching are observed in a typical Pt/ZrO 2/Pt whose ZrO 2 film has been deposited at 100°C and at an oxygen pressure of 50 mTorr. The Pt/ZrO 2/Pt structure exhibits two ohmic behaviors in the low-voltage region (V < 1.4 V), depending on the value of previously applied high voltage, and Schottky-type conduction in the high-voltage region (1.4 V < V < 8,9 V), It seems that conductivity switching behaviors in our Pt/ZrO 2/Pt structure result from changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages. A Pt/YSZ/Pt capacitor structure has more stable reset voltage and current state than a Pt/ZrO 2/Pt capacitor structure. Moreover, a Pt/YSZ/Pt capacitor structure shows higher conductivity than a Pt/ZrO 2/Pt capacitor structure, which may result from substitution of Y 3+ ions for Zr 4+ ions.

Original languageEnglish
Pages (from-to)S247-S250
JournalJournal of the Korean Physical Society
Issue numberSUPPL. 2
StatePublished - Sep 2005


  • Conductivity
  • PLD
  • Switching
  • YSZ
  • ZrO


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