Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer

Hogyoung Kim, Yunae Cho, Dong Wook Kim, Dong Ha Kim, Yong Kim, Byung Joon Choi

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The temperature-dependent electrical properties of Au/GaN Schottky diodes with an Al2O3 layer prepared by using atomic layer deposition (ALD) were investigated. Compared to the Au/GaN junction, the Au/Al2O3/GaN junction was found to have lower barrier heights and higher ideality factors. For the Au/GaN junction, the native oxide and the thin surface barrier formed by surface states caused a large leakage current and a small capacitance. Due to surface passivation through the ALD process, the leakage current for the Au/Al2O3/GaN junction was reduced. The barrier height reduction for the Au/Al2O3/GaN junction was associated with interface dipole formation at the Al2O3/GaN interface.

Original languageEnglish
Pages (from-to)349-354
Number of pages6
JournalJournal of the Korean Physical Society
Volume73
Issue number3
DOIs
StatePublished - 1 Aug 2018

Bibliographical note

Funding Information:
This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2014R1A1A2054597, 2016R1D1A1A09917491 and 2017R1D1A1B03030400). The authors thank K. Na and D. Lee for their valuable contribution to the low-temperature measurements.

Publisher Copyright:
© 2018, The Korean Physical Society.

Keywords

  • Atomic layer deposition
  • Barrier height
  • GaN
  • Surface states

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