Electrical performances of InN/GaN tunneling field-effect transistor

Min Su Cho, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Chul Ho Won, Jeong Gil Kim, Junsoo Lee, Seongjae Cho, Jung Hee Lee, In Man Kang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


In this paper, we design and analyze the InN/GaN double-gate (DG) tunneling field-effect transistor (TFET) with very steep switching and superb DC and RF characteristics. The proposed device is closely investigated in terms of both DC and RF performances including Ion, Ioff, on/off current ratio (Ion/Ioff), subthreshold swing (S), cut-off frequency (ft), maximum oscillating frequency (fmax), and Johnson’s figure of merit (JFOM) using TCAD simulation. The proposed InN/GaN TFET shows high current drivability, extremely suppressed Ioff, and higly sharp switching owing to the effects by the electron well formed by the control gate (CG) in the InN layer. The InN/GaN TFET having a channel length (Lch) of 50 nm demonstrated maximum Ion = 35 mA/m, extremely low Ioff = 1×10?21 A/m, minimum S of 8.8 mV/dec, and the maximum values of ft and fmax are obtained as 100 GHz and 5.5 THz, respectively. In order to confirm the high performances of the devices in the RF operation, JFOM has been calculated and the value extracted from an optimally designed InN/GaN TFET is 1.7 THz · V.

Original languageEnglish
Pages (from-to)8355-8359
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Issue number11
StatePublished - 2017

Bibliographical note

Publisher Copyright:
Copyright © 2017 American Scientific Publishers All rights reserved


  • Double gate
  • Field-effect transistor
  • Gallium nitride
  • III-nitride heterojunction
  • InN/GaN
  • Power device


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