Electrical performances of InN/GaN tunneling field-effect transistor

In this paper, we design and analyze the InN/GaN double-gate (DG) tunneling field-effect transistor (TFET) with very steep switching and superb DC and RF characteristics. The proposed device is closely investigated in terms of both DC and RF performances including I_on, I_off, on/off current ratio (I_on/I_off), subthreshold swing (S), cut-off frequency (f_t), maximum oscillating frequency (f_max), and Johnson’s figure of merit (JFOM) using TCAD simulation. The proposed InN/GaN TFET shows high current drivability, extremely suppressed I_off, and higly sharp switching owing to the effects by the electron well formed by the control gate (CG) in the InN layer. The InN/GaN TFET having a channel length (L_ch) of 50 nm demonstrated maximum I_on = 35 mA/m, extremely low I_off = 1×10^?21 A/m, minimum S of 8.8 mV/dec, and the maximum values of ft and fmax are obtained as 100 GHz and 5.5 THz, respectively. In order to confirm the high performances of the devices in the RF operation, JFOM has been calculated and the value extracted from an optimally designed InN/GaN TFET is 1.7 THz · V.