Electrical observations of filamentary conductions for the resistive memory switching in NiO films

D. C. Kim; S. Seo; S. E. Ahn; D. S. Suh; M. J. Lee; B. H. Park; I. K. Yoo; I. G. Baek; H. J. Kim; E. K. Yim; J. E. Lee; S. O. Park; H. S. Kim; U. In Chung; J. T. Moon; B. I. Ryu

doi:10.1063/1.2204649

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

D. C. Kim, S. Seo, S. E. Ahn, D. S. Suh, M. J. Lee, B. H. Park, I. K. Yoo, I. G. Baek, H. J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U. In Chung, J. T. Moon, B. I. Ryu

Department of Physics

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Abstract

Experimental results on the bistable resistive memory switching in submicron sized NiO memory cells are presented. By using a current-bias method, intermediate resistance states and anomalous resistance fluctuations between resistance states are observed during the resistive transition from high resistance state to low resistance state. They are interpreted to be associated with filamentary conducting paths with their formation and rupture for the memory switching origin in NiO. The experimental results are discussed on the basis of filamentary conductions in consideration of local Joule heating effect.

Original language	English
Article number	202102
Journal	Applied Physics Letters
Volume	88
Issue number	20
DOIs	https://doi.org/10.1063/1.2204649
State	Published - 15 May 2006

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Kim, D. C., Seo, S., Ahn, S. E., Suh, D. S., Lee, M. J., Park, B. H., Yoo, I. K., Baek, I. G., Kim, H. J., Yim, E. K., Lee, J. E., Park, S. O., Kim, H. S., Chung, U. I., Moon, J. T., & Ryu, B. I. (2006). Electrical observations of filamentary conductions for the resistive memory switching in NiO films. Applied Physics Letters, 88(20), Article 202102. https://doi.org/10.1063/1.2204649

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title = "Electrical observations of filamentary conductions for the resistive memory switching in NiO films",

abstract = "Experimental results on the bistable resistive memory switching in submicron sized NiO memory cells are presented. By using a current-bias method, intermediate resistance states and anomalous resistance fluctuations between resistance states are observed during the resistive transition from high resistance state to low resistance state. They are interpreted to be associated with filamentary conducting paths with their formation and rupture for the memory switching origin in NiO. The experimental results are discussed on the basis of filamentary conductions in consideration of local Joule heating effect.",

author = "Kim, {D. C.} and S. Seo and Ahn, {S. E.} and Suh, {D. S.} and Lee, {M. J.} and Park, {B. H.} and Yoo, {I. K.} and Baek, {I. G.} and Kim, {H. J.} and Yim, {E. K.} and Lee, {J. E.} and Park, {S. O.} and Kim, {H. S.} and Chung, {U. In} and Moon, {J. T.} and Ryu, {B. I.}",

year = "2006",

month = may,

day = "15",

doi = "10.1063/1.2204649",

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journal = "Applied Physics Letters",

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AU - Kim, D. C.

AU - Seo, S.

AU - Ahn, S. E.

AU - Suh, D. S.

AU - Lee, M. J.

AU - Park, B. H.

AU - Yoo, I. K.

AU - Baek, I. G.

AU - Kim, H. J.

AU - Yim, E. K.

AU - Lee, J. E.

AU - Park, S. O.

AU - Kim, H. S.

AU - Chung, U. In

AU - Moon, J. T.

AU - Ryu, B. I.

PY - 2006/5/15

Y1 - 2006/5/15

N2 - Experimental results on the bistable resistive memory switching in submicron sized NiO memory cells are presented. By using a current-bias method, intermediate resistance states and anomalous resistance fluctuations between resistance states are observed during the resistive transition from high resistance state to low resistance state. They are interpreted to be associated with filamentary conducting paths with their formation and rupture for the memory switching origin in NiO. The experimental results are discussed on the basis of filamentary conductions in consideration of local Joule heating effect.

AB - Experimental results on the bistable resistive memory switching in submicron sized NiO memory cells are presented. By using a current-bias method, intermediate resistance states and anomalous resistance fluctuations between resistance states are observed during the resistive transition from high resistance state to low resistance state. They are interpreted to be associated with filamentary conducting paths with their formation and rupture for the memory switching origin in NiO. The experimental results are discussed on the basis of filamentary conductions in consideration of local Joule heating effect.

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VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

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ER -

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

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