Electrical observations of filamentary conductions for the resistive memory switching in NiO films

D. C. Kim, S. Seo, S. E. Ahn, D. S. Suh, M. J. Lee, B. H. Park, I. K. Yoo, I. G. Baek, H. J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U. In Chung, J. T. Moon, B. I. Ryu

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Abstract

Experimental results on the bistable resistive memory switching in submicron sized NiO memory cells are presented. By using a current-bias method, intermediate resistance states and anomalous resistance fluctuations between resistance states are observed during the resistive transition from high resistance state to low resistance state. They are interpreted to be associated with filamentary conducting paths with their formation and rupture for the memory switching origin in NiO. The experimental results are discussed on the basis of filamentary conductions in consideration of local Joule heating effect.

Original languageEnglish
Article number202102
JournalApplied Physics Letters
Volume88
Issue number20
DOIs
StatePublished - 15 May 2006

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