Electrical characteristics of tunneling field-effect transistors using vertical tunneling operation based on ALGaSb/InGaAs

Bo Gyeong Kim; Ra Hee Kwon; Jae Hwa Seo; Young Jun Yoon; Young In Jang; Min Su Cho; Jung Hee Lee; Seongjae Cho; In Man Kang

doi:10.5370/JEET.2017.12.6.2324

Electrical characteristics of tunneling field-effect transistors using vertical tunneling operation based on ALGaSb/InGaAs

Bo Gyeong Kim, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Min Su Cho, Jung Hee Lee, Seongjae Cho, In Man Kang

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current (I_on), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length (L_G) was scaled down. The proposed TFET with a L_G of 5 nm operated with an I_on of 1.3 mA/µm, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage (V_DS) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional L_G of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

Original language	English
Pages (from-to)	2324-2332
Number of pages	9
Journal	Journal of Electrical Engineering and Technology
Volume	12
Issue number	6
DOIs	https://doi.org/10.5370/JEET.2017.12.6.2324
State	Published - Nov 2017

Bibliographical note

Funding Information:
This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2016R1C1B2015979), and in part by Samsung Electronics Co. Ltd. This work was supported by the BK21 Plus project and Global Ph.D. Fellowship Program through the NRF funded by the Ministry of Education (21A20131600011, 2013H1A2A1034363). This work was supported by IDEC (EDA Tool, MPW).

Publisher Copyright:
© The Korean Institute of Electrical Engineers.

Keywords

Drain-induced barrier thinning
Heterojunction
Short-channel effect
Tunneling field-effect transistor
Vertical tunneling

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10.5370/JEET.2017.12.6.2324

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title = "Electrical characteristics of tunneling field-effect transistors using vertical tunneling operation based on ALGaSb/InGaAs",

abstract = "This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current (Ion), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length (LG) was scaled down. The proposed TFET with a LG of 5 nm operated with an Ion of 1.3 mA/µm, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage (VDS) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional LG of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.",

keywords = "Drain-induced barrier thinning, Heterojunction, Short-channel effect, Tunneling field-effect transistor, Vertical tunneling",

author = "Kim, {Bo Gyeong} and Kwon, {Ra Hee} and Seo, {Jae Hwa} and Yoon, {Young Jun} and Jang, {Young In} and Cho, {Min Su} and Lee, {Jung Hee} and Seongjae Cho and Kang, {In Man}",

note = "Funding Information: This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2016R1C1B2015979), and in part by Samsung Electronics Co. Ltd. This work was supported by the BK21 Plus project and Global Ph.D. Fellowship Program through the NRF funded by the Ministry of Education (21A20131600011, 2013H1A2A1034363). This work was supported by IDEC (EDA Tool, MPW). Publisher Copyright: {\textcopyright} The Korean Institute of Electrical Engineers.",

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AU - Kim, Bo Gyeong

AU - Kwon, Ra Hee

AU - Seo, Jae Hwa

AU - Yoon, Young Jun

AU - Jang, Young In

AU - Cho, Min Su

AU - Lee, Jung Hee

AU - Cho, Seongjae

AU - Kang, In Man

N1 - Funding Information: This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2016R1C1B2015979), and in part by Samsung Electronics Co. Ltd. This work was supported by the BK21 Plus project and Global Ph.D. Fellowship Program through the NRF funded by the Ministry of Education (21A20131600011, 2013H1A2A1034363). This work was supported by IDEC (EDA Tool, MPW). Publisher Copyright: © The Korean Institute of Electrical Engineers.

PY - 2017/11

Y1 - 2017/11

N2 - This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current (Ion), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length (LG) was scaled down. The proposed TFET with a LG of 5 nm operated with an Ion of 1.3 mA/µm, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage (VDS) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional LG of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

AB - This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current (Ion), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length (LG) was scaled down. The proposed TFET with a LG of 5 nm operated with an Ion of 1.3 mA/µm, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage (VDS) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional LG of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

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Electrical characteristics of tunneling field-effect transistors using vertical tunneling operation based on ALGaSb/InGaAs

Abstract

Bibliographical note

Keywords

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