This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current (Ion), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length (LG) was scaled down. The proposed TFET with a LG of 5 nm operated with an Ion of 1.3 mA/µm, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage (VDS) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional LG of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.
Bibliographical noteFunding Information:
This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2016R1C1B2015979), and in part by Samsung Electronics Co. Ltd. This work was supported by the BK21 Plus project and Global Ph.D. Fellowship Program through the NRF funded by the Ministry of Education (21A20131600011, 2013H1A2A1034363). This work was supported by IDEC (EDA Tool, MPW).
© The Korean Institute of Electrical Engineers.
- Drain-induced barrier thinning
- Short-channel effect
- Tunneling field-effect transistor
- Vertical tunneling