Electric field aligned growth of single-walled carbon nanotubes

S. Dittmer; J. Svensson; Eleanor E.B. Campbell

doi:10.1016/j.cap.2004.01.026

Electric field aligned growth of single-walled carbon nanotubes

S. Dittmer
, J. Svensson
, Eleanor E.B. Campbell

Department of Physics

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Electric field aligned, single-walled carbon nanotubes are grown between electrodes using thermal chemical vapour deposition (CVD) of methane. The growth occurs on a thin film layered catalyst of aluminium, iron and molybdenum patterned on top of electrodes. The nanotubes bridge 10 μm sized electrode gaps and have a typical diameter of less than 2 nm as measured by Raman spectroscopy and atomic force microscopy. We present electrical transport measurements on a directly grown nanotube which shows p-type semiconducting behaviour.

Original language	English
Pages (from-to)	595-598
Number of pages	4
Journal	Current Applied Physics
Volume	4
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2004.01.026
State	Published - Nov 2004

Bibliographical note

Funding Information:
Financial support from the Swedish Strategic Research Foundation, SSF (CARAMEL Consortium) is gratefully acknowledged. We thank R. Morjan and O. Nerushev for help with the thermal CVD set-up.

Keywords

Aligned SWNT
CVD
Electrical transport
Growth

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10.1016/j.cap.2004.01.026

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title = "Electric field aligned growth of single-walled carbon nanotubes",

abstract = "Electric field aligned, single-walled carbon nanotubes are grown between electrodes using thermal chemical vapour deposition (CVD) of methane. The growth occurs on a thin film layered catalyst of aluminium, iron and molybdenum patterned on top of electrodes. The nanotubes bridge 10 μm sized electrode gaps and have a typical diameter of less than 2 nm as measured by Raman spectroscopy and atomic force microscopy. We present electrical transport measurements on a directly grown nanotube which shows p-type semiconducting behaviour.",

keywords = "Aligned SWNT, CVD, Electrical transport, Growth",

author = "S. Dittmer and J. Svensson and Campbell, \{Eleanor E.B.\}",

note = "Funding Information: Financial support from the Swedish Strategic Research Foundation, SSF (CARAMEL Consortium) is gratefully acknowledged. We thank R. Morjan and O. Nerushev for help with the thermal CVD set-up.",

year = "2004",

month = nov,

doi = "10.1016/j.cap.2004.01.026",

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pages = "595--598",

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T1 - Electric field aligned growth of single-walled carbon nanotubes

AU - Dittmer, S.

AU - Svensson, J.

AU - Campbell, Eleanor E.B.

N1 - Funding Information: Financial support from the Swedish Strategic Research Foundation, SSF (CARAMEL Consortium) is gratefully acknowledged. We thank R. Morjan and O. Nerushev for help with the thermal CVD set-up.

PY - 2004/11

Y1 - 2004/11

N2 - Electric field aligned, single-walled carbon nanotubes are grown between electrodes using thermal chemical vapour deposition (CVD) of methane. The growth occurs on a thin film layered catalyst of aluminium, iron and molybdenum patterned on top of electrodes. The nanotubes bridge 10 μm sized electrode gaps and have a typical diameter of less than 2 nm as measured by Raman spectroscopy and atomic force microscopy. We present electrical transport measurements on a directly grown nanotube which shows p-type semiconducting behaviour.

AB - Electric field aligned, single-walled carbon nanotubes are grown between electrodes using thermal chemical vapour deposition (CVD) of methane. The growth occurs on a thin film layered catalyst of aluminium, iron and molybdenum patterned on top of electrodes. The nanotubes bridge 10 μm sized electrode gaps and have a typical diameter of less than 2 nm as measured by Raman spectroscopy and atomic force microscopy. We present electrical transport measurements on a directly grown nanotube which shows p-type semiconducting behaviour.

KW - Aligned SWNT

KW - CVD

KW - Electrical transport

KW - Growth

UR - https://www.scopus.com/pages/publications/5144228000

U2 - 10.1016/j.cap.2004.01.026

DO - 10.1016/j.cap.2004.01.026

M3 - Article

AN - SCOPUS:5144228000

SN - 1567-1739

VL - 4

SP - 595

EP - 598

JO - Current Applied Physics

JF - Current Applied Physics

IS - 6

ER -

Electric field aligned growth of single-walled carbon nanotubes

Abstract

Bibliographical note

Keywords

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