Efficient frequency-domain simulation technique for short-channel MOSFET

Kyu Il Lee; Chanho Lee; Hyungsoon Shin; Young June Park; Hong Shick Min

doi:10.1109/TCAD.2005.847896

Efficient frequency-domain simulation technique for short-channel MOSFET

Kyu Il Lee, Chanho Lee, Hyungsoon Shin, Young June Park, Hong Shick Min

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This paper proposes and investigates a short-channel MOSFET model down to a 0.1-μm regime for the frequency-domain analysis of the device operation through the harmonic balance technique. The efficiency and the preciseness of our method are validated by comparison of simulation results with the two-dimensional time-domain simulation tool, MEDICI. Along with the carrier transport model, the displacement current components are included in the terminal current equations for the extended analysis under external circuit environments.

Original language	English
Pages (from-to)	862-867
Number of pages	6
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	24
Issue number	6
DOIs	https://doi.org/10.1109/TCAD.2005.847896
State	Published - Jun 2005

Bibliographical note

Funding Information:
Manuscript received November 3, 2003; revised March 10, 2004 and June 14, 2004. This work was supported in part by the National Research Laboratory Project of the Ministry of Science and Technology, and in part by the Brain Korea 21 Project, in part by the Nano-Systems Institute—National Core Research Center (NSI-NCRC) program sponsored by the Korea Science and Engineering Foundation (KOSEF). This paper was recommended by Associate Editor W. Schoenmaker.

Funding Information:
The authors appreciate the support of the National Research Laboratory Project of the Ministry of Science and Technology and the Brain Korea 21 Project. This work was also supported by the Nano-Systems Institute—National Core Research Center (NSI-NCRC) program sponsored by the Korea Science and Engineering Foundation (KOSEF).

Keywords

Harmonic balance (HB) technique
Harmonic distortion
Nonquasistatic (NQS) effect
Short-channel MOSFET

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10.1109/TCAD.2005.847896

Cite this

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title = "Efficient frequency-domain simulation technique for short-channel MOSFET",

abstract = "This paper proposes and investigates a short-channel MOSFET model down to a 0.1-μm regime for the frequency-domain analysis of the device operation through the harmonic balance technique. The efficiency and the preciseness of our method are validated by comparison of simulation results with the two-dimensional time-domain simulation tool, MEDICI. Along with the carrier transport model, the displacement current components are included in the terminal current equations for the extended analysis under external circuit environments.",

keywords = "Harmonic balance (HB) technique, Harmonic distortion, Nonquasistatic (NQS) effect, Short-channel MOSFET",

author = "Lee, {Kyu Il} and Chanho Lee and Hyungsoon Shin and Park, {Young June} and Min, {Hong Shick}",

note = "Funding Information: Manuscript received November 3, 2003; revised March 10, 2004 and June 14, 2004. This work was supported in part by the National Research Laboratory Project of the Ministry of Science and Technology, and in part by the Brain Korea 21 Project, in part by the Nano-Systems Institute—National Core Research Center (NSI-NCRC) program sponsored by the Korea Science and Engineering Foundation (KOSEF). This paper was recommended by Associate Editor W. Schoenmaker. Funding Information: The authors appreciate the support of the National Research Laboratory Project of the Ministry of Science and Technology and the Brain Korea 21 Project. This work was also supported by the Nano-Systems Institute—National Core Research Center (NSI-NCRC) program sponsored by the Korea Science and Engineering Foundation (KOSEF).",

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AU - Shin, Hyungsoon

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AU - Min, Hong Shick

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Efficient frequency-domain simulation technique for short-channel MOSFET

Abstract

Bibliographical note

Keywords

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