Efficient frequency-domain simulation technique for short-channel MOSFET

Kyu Il Lee, Chanho Lee, Hyungsoon Shin, Young June Park, Hong Shick Min

Research output: Contribution to journalArticlepeer-review


This paper proposes and investigates a short-channel MOSFET model down to a 0.1-μm regime for the frequency-domain analysis of the device operation through the harmonic balance technique. The efficiency and the preciseness of our method are validated by comparison of simulation results with the two-dimensional time-domain simulation tool, MEDICI. Along with the carrier transport model, the displacement current components are included in the terminal current equations for the extended analysis under external circuit environments.

Original languageEnglish
Pages (from-to)862-867
Number of pages6
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Issue number6
StatePublished - Jun 2005


  • Harmonic balance (HB) technique
  • Harmonic distortion
  • Nonquasistatic (NQS) effect
  • Short-channel MOSFET


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