Effects of ZrO2 doping on HfO2 resistive switching memory characteristics

Seung Wook Ryu; Seongjae Cho; Joonsuk Park; Jungsuk Kwac; Hyeong Joon Kim; Yoshio Nishi

doi:10.1063/1.4893568

Effects of ZrO₂ doping on HfO₂ resistive switching memory characteristics

Seung Wook Ryu, Seongjae Cho, Joonsuk Park, Jungsuk Kwac, Hyeong Joon Kim, Yoshio Nishi

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

A resistive switching (RS) random access memory device with ZrO ₂-doped HfO₂ exhibits better RS performance than that with pure HfO₂. In particular, I_res, V_res, and V_set are reduced by approximately 58%, 38%, and 39%, respectively, when HfO₂ is doped with ZrO₂ (9 at.%). In addition, the ZrO₂ doping in HfO₂ makes the distribution of most parameters steeper. Transmission electron microscopy (TEM) analysis reveals that the deposited zirconium-doped hafnium oxide (HZO) (9 at.%) is polycrystalline. Elemental mapping results by scanning TEM-energy dispersive spectroscopy also prove that ZrO₂ is uniformly distributed in the HZO (9 at.%) film. The possible mechanism for the improvement in the RS characteristics is also suggested on the basis of the X-ray photoelectron spectroscopy results and filamentary RS mechanism. These results suggest that the ZrO₂ doping into HfO₂ likely not only will reduce power consumption but also will improve cyclic endurance by controlling the nonstoichiometric phase.

Original language	English
Article number	072102
Journal	Applied Physics Letters
Volume	105
Issue number	7
DOIs	https://doi.org/10.1063/1.4893568
State	Published - 18 Aug 2014

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title = "Effects of ZrO2 doping on HfO2 resistive switching memory characteristics",

abstract = "A resistive switching (RS) random access memory device with ZrO 2-doped HfO2 exhibits better RS performance than that with pure HfO2. In particular, Ires, Vres, and Vset are reduced by approximately 58%, 38%, and 39%, respectively, when HfO2 is doped with ZrO2 (9 at.%). In addition, the ZrO2 doping in HfO2 makes the distribution of most parameters steeper. Transmission electron microscopy (TEM) analysis reveals that the deposited zirconium-doped hafnium oxide (HZO) (9 at.%) is polycrystalline. Elemental mapping results by scanning TEM-energy dispersive spectroscopy also prove that ZrO2 is uniformly distributed in the HZO (9 at.%) film. The possible mechanism for the improvement in the RS characteristics is also suggested on the basis of the X-ray photoelectron spectroscopy results and filamentary RS mechanism. These results suggest that the ZrO2 doping into HfO2 likely not only will reduce power consumption but also will improve cyclic endurance by controlling the nonstoichiometric phase.",

author = "Ryu, {Seung Wook} and Seongjae Cho and Joonsuk Park and Jungsuk Kwac and Kim, {Hyeong Joon} and Yoshio Nishi",

year = "2014",

month = aug,

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doi = "10.1063/1.4893568",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

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T1 - Effects of ZrO2 doping on HfO2 resistive switching memory characteristics

AU - Ryu, Seung Wook

AU - Cho, Seongjae

AU - Park, Joonsuk

AU - Kwac, Jungsuk

AU - Kim, Hyeong Joon

AU - Nishi, Yoshio

PY - 2014/8/18

Y1 - 2014/8/18

N2 - A resistive switching (RS) random access memory device with ZrO 2-doped HfO2 exhibits better RS performance than that with pure HfO2. In particular, Ires, Vres, and Vset are reduced by approximately 58%, 38%, and 39%, respectively, when HfO2 is doped with ZrO2 (9 at.%). In addition, the ZrO2 doping in HfO2 makes the distribution of most parameters steeper. Transmission electron microscopy (TEM) analysis reveals that the deposited zirconium-doped hafnium oxide (HZO) (9 at.%) is polycrystalline. Elemental mapping results by scanning TEM-energy dispersive spectroscopy also prove that ZrO2 is uniformly distributed in the HZO (9 at.%) film. The possible mechanism for the improvement in the RS characteristics is also suggested on the basis of the X-ray photoelectron spectroscopy results and filamentary RS mechanism. These results suggest that the ZrO2 doping into HfO2 likely not only will reduce power consumption but also will improve cyclic endurance by controlling the nonstoichiometric phase.

AB - A resistive switching (RS) random access memory device with ZrO 2-doped HfO2 exhibits better RS performance than that with pure HfO2. In particular, Ires, Vres, and Vset are reduced by approximately 58%, 38%, and 39%, respectively, when HfO2 is doped with ZrO2 (9 at.%). In addition, the ZrO2 doping in HfO2 makes the distribution of most parameters steeper. Transmission electron microscopy (TEM) analysis reveals that the deposited zirconium-doped hafnium oxide (HZO) (9 at.%) is polycrystalline. Elemental mapping results by scanning TEM-energy dispersive spectroscopy also prove that ZrO2 is uniformly distributed in the HZO (9 at.%) film. The possible mechanism for the improvement in the RS characteristics is also suggested on the basis of the X-ray photoelectron spectroscopy results and filamentary RS mechanism. These results suggest that the ZrO2 doping into HfO2 likely not only will reduce power consumption but also will improve cyclic endurance by controlling the nonstoichiometric phase.

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JF - Applied Physics Letters

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ER -

Effects of ZrO2 doping on HfO2 resistive switching memory characteristics

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Effects of ZrO₂ doping on HfO₂ resistive switching memory characteristics