Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

Moon Seok Kim; Young Hwan Hwang; Sungho Kim; Zheng Guo; Dong Il Moon; Ji Min Choi; Myeong Lok Seol; Byeong Soo Bae; Yang Kyu Choi

doi:10.1063/1.4770073

Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

Moon Seok Kim
, Young Hwan Hwang
, Sungho Kim
, Zheng Guo
, Dong Il Moon
, Ji Min Choi
, Myeong Lok Seol
, Byeong Soo Bae
, Yang Kyu Choi

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

Resistance random access memory (RRAM) composed of stacked aluminum (Al)/InGaZnO(IGZO)/Al is investigated with different gallium concentrations. The stoichiometric ratio (x) of gallium in the InGa_xZnO is varied from 0 to 4 for intentional control of the concentration of the oxygen vacancies (V_O), which influences the electrical characteristics of the RRAM. No Ga in the IGZO (x=0) significantly increases the value of V_O and leads to a breakdown of the IGZO. In contrast, a high Ga concentration (x=4) suppresses the generation of V_O; hence, resistive switching is disabled. The optimal value of x is 2. Accordingly, enduring RRAM characteristics are achieved.

Original language	English
Article number	243503
Journal	Applied Physics Letters
Volume	101
Issue number	24
DOIs	https://doi.org/10.1063/1.4770073
State	Published - 10 Dec 2012

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title = "Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory",

abstract = "Resistance random access memory (RRAM) composed of stacked aluminum (Al)/InGaZnO(IGZO)/Al is investigated with different gallium concentrations. The stoichiometric ratio (x) of gallium in the InGaxZnO is varied from 0 to 4 for intentional control of the concentration of the oxygen vacancies (VO), which influences the electrical characteristics of the RRAM. No Ga in the IGZO (x=0) significantly increases the value of VO and leads to a breakdown of the IGZO. In contrast, a high Ga concentration (x=4) suppresses the generation of VO; hence, resistive switching is disabled. The optimal value of x is 2. Accordingly, enduring RRAM characteristics are achieved.",

author = "Kim, \{Moon Seok\} and \{Hwan Hwang\}, Young and Sungho Kim and Zheng Guo and Moon, \{Dong Il\} and Choi, \{Ji Min\} and Seol, \{Myeong Lok\} and Bae, \{Byeong Soo\} and Choi, \{Yang Kyu\}",

year = "2012",

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doi = "10.1063/1.4770073",

language = "English",

volume = "101",

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TY - JOUR

T1 - Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

AU - Kim, Moon Seok

AU - Hwan Hwang, Young

AU - Kim, Sungho

AU - Guo, Zheng

AU - Moon, Dong Il

AU - Choi, Ji Min

AU - Seol, Myeong Lok

AU - Bae, Byeong Soo

AU - Choi, Yang Kyu

PY - 2012/12/10

Y1 - 2012/12/10

N2 - Resistance random access memory (RRAM) composed of stacked aluminum (Al)/InGaZnO(IGZO)/Al is investigated with different gallium concentrations. The stoichiometric ratio (x) of gallium in the InGaxZnO is varied from 0 to 4 for intentional control of the concentration of the oxygen vacancies (VO), which influences the electrical characteristics of the RRAM. No Ga in the IGZO (x=0) significantly increases the value of VO and leads to a breakdown of the IGZO. In contrast, a high Ga concentration (x=4) suppresses the generation of VO; hence, resistive switching is disabled. The optimal value of x is 2. Accordingly, enduring RRAM characteristics are achieved.

AB - Resistance random access memory (RRAM) composed of stacked aluminum (Al)/InGaZnO(IGZO)/Al is investigated with different gallium concentrations. The stoichiometric ratio (x) of gallium in the InGaxZnO is varied from 0 to 4 for intentional control of the concentration of the oxygen vacancies (VO), which influences the electrical characteristics of the RRAM. No Ga in the IGZO (x=0) significantly increases the value of VO and leads to a breakdown of the IGZO. In contrast, a high Ga concentration (x=4) suppresses the generation of VO; hence, resistive switching is disabled. The optimal value of x is 2. Accordingly, enduring RRAM characteristics are achieved.

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U2 - 10.1063/1.4770073

DO - 10.1063/1.4770073

M3 - Article

AN - SCOPUS:84871305008

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243503

ER -

Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

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