Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

Moon Seok Kim; Young Hwan Hwang; Sungho Kim; Zheng Guo; Dong Il Moon; Ji Min Choi; Myeong Lok Seol; Byeong Soo Bae; Yang Kyu Choi

doi:10.1063/1.4770073

Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

Moon Seok Kim, Young Hwan Hwang, Sungho Kim, Zheng Guo, Dong Il Moon, Ji Min Choi, Myeong Lok Seol, Byeong Soo Bae, Yang Kyu Choi

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

Resistance random access memory (RRAM) composed of stacked aluminum (Al)/InGaZnO(IGZO)/Al is investigated with different gallium concentrations. The stoichiometric ratio (x) of gallium in the InGa_xZnO is varied from 0 to 4 for intentional control of the concentration of the oxygen vacancies (V_O), which influences the electrical characteristics of the RRAM. No Ga in the IGZO (x=0) significantly increases the value of V_O and leads to a breakdown of the IGZO. In contrast, a high Ga concentration (x=4) suppresses the generation of V_O; hence, resistive switching is disabled. The optimal value of x is 2. Accordingly, enduring RRAM characteristics are achieved.

Original language	English
Article number	243503
Journal	Applied Physics Letters
Volume	101
Issue number	24
DOIs	https://doi.org/10.1063/1.4770073
State	Published - 10 Dec 2012

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title = "Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory",

abstract = "Resistance random access memory (RRAM) composed of stacked aluminum (Al)/InGaZnO(IGZO)/Al is investigated with different gallium concentrations. The stoichiometric ratio (x) of gallium in the InGaxZnO is varied from 0 to 4 for intentional control of the concentration of the oxygen vacancies (VO), which influences the electrical characteristics of the RRAM. No Ga in the IGZO (x=0) significantly increases the value of VO and leads to a breakdown of the IGZO. In contrast, a high Ga concentration (x=4) suppresses the generation of VO; hence, resistive switching is disabled. The optimal value of x is 2. Accordingly, enduring RRAM characteristics are achieved.",

author = "Kim, {Moon Seok} and {Hwan Hwang}, Young and Sungho Kim and Zheng Guo and Moon, {Dong Il} and Choi, {Ji Min} and Seol, {Myeong Lok} and Bae, {Byeong Soo} and Choi, {Yang Kyu}",

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doi = "10.1063/1.4770073",

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T1 - Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

AU - Kim, Moon Seok

AU - Hwan Hwang, Young

AU - Kim, Sungho

AU - Guo, Zheng

AU - Moon, Dong Il

AU - Choi, Ji Min

AU - Seol, Myeong Lok

AU - Bae, Byeong Soo

AU - Choi, Yang Kyu

PY - 2012/12/10

Y1 - 2012/12/10

N2 - Resistance random access memory (RRAM) composed of stacked aluminum (Al)/InGaZnO(IGZO)/Al is investigated with different gallium concentrations. The stoichiometric ratio (x) of gallium in the InGaxZnO is varied from 0 to 4 for intentional control of the concentration of the oxygen vacancies (VO), which influences the electrical characteristics of the RRAM. No Ga in the IGZO (x=0) significantly increases the value of VO and leads to a breakdown of the IGZO. In contrast, a high Ga concentration (x=4) suppresses the generation of VO; hence, resistive switching is disabled. The optimal value of x is 2. Accordingly, enduring RRAM characteristics are achieved.

AB - Resistance random access memory (RRAM) composed of stacked aluminum (Al)/InGaZnO(IGZO)/Al is investigated with different gallium concentrations. The stoichiometric ratio (x) of gallium in the InGaxZnO is varied from 0 to 4 for intentional control of the concentration of the oxygen vacancies (VO), which influences the electrical characteristics of the RRAM. No Ga in the IGZO (x=0) significantly increases the value of VO and leads to a breakdown of the IGZO. In contrast, a high Ga concentration (x=4) suppresses the generation of VO; hence, resistive switching is disabled. The optimal value of x is 2. Accordingly, enduring RRAM characteristics are achieved.

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VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

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