We have tried to use surfactants in order to tune the shape and orientation of Nb-doped Bi4Ti13O12 (BITNb) thin films. BITNb thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a metalorganic solution deposition method. The precursor solution for the BITNb thin films was modified with adding surfactant cetyltrimethylammonium bromide in acid or basic atmospheres. The measured XRD patterns revealed that the BITNb thin film prepared with a surfactant in acid atmosphere showed only a Bi4Ti3O12-type phase with highly c-axis orientation. However, for the BITNb thin film prepared without surfactant showed random orientation. The remanent polarization (2Pr) and the coercive field (2Ec) of BITNb thin films with c-axis and random orientation were 2.0 μC/cm2 and 14.9 kV/cm, and 12.3 μC/cm2 and 113.9 kV/cm, respectively.
|Journal||Journal of the Korean Physical Society|
|State||Published - Apr 2003|
- Ferroelectric Property
- Thin Film