Effects of substrate temperature on the properties of Ga-doped ZnO prepared by using a FTS system

Transparent conductive Ga-doped ZnO (GZO) thin films were deposited on corning glass substrates by using facing target sputtering (FTS) systems. This study examined the properties of GZO films as a function of substrate temperature (from room temperature (R.T.) to 300° C. The sputtering targets were a 4-inch-diameter disk of GZO (ZnO:Ga₂O₃ = 97:3 wt.%) and a Zn metal disk. The electrical, structural and optical properties were investigated by using a 4-point probe, Hall effect measurements, X-ray diffractometry, field emitting scanning electron microscopy, and UV/VIS spectrometry. As the results, the resistivity of the as-grown GZO thin film was 9.34 × 10^-4 Ω -dm, and the optical transmittances of all the deposited films was over 80% in the visible range.