Effects of substrate temperature on the properties of Ga-doped ZnO prepared by using a FTS system

Yu Sup Jung; Hyung Wook Choi; Yong Seo Park; Kyung Hwan Kim; Woo Jae Kim

doi:10.3938/jkps.57.1909

Effects of substrate temperature on the properties of Ga-doped ZnO prepared by using a FTS system

Yu Sup Jung, Hyung Wook Choi, Yong Seo Park, Kyung Hwan Kim, Woo Jae Kim

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Transparent conductive Ga-doped ZnO (GZO) thin films were deposited on corning glass substrates by using facing target sputtering (FTS) systems. This study examined the properties of GZO films as a function of substrate temperature (from room temperature (R.T.) to 300° C. The sputtering targets were a 4-inch-diameter disk of GZO (ZnO:Ga₂O₃ = 97:3 wt.%) and a Zn metal disk. The electrical, structural and optical properties were investigated by using a 4-point probe, Hall effect measurements, X-ray diffractometry, field emitting scanning electron microscopy, and UV/VIS spectrometry. As the results, the resistivity of the as-grown GZO thin film was 9.34 × 10^-4 Ω -dm, and the optical transmittances of all the deposited films was over 80% in the visible range.

Original language	English
Pages (from-to)	1909-1913
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	57
Issue number	61
DOIs	https://doi.org/10.3938/jkps.57.1909
State	Published - Dec 2010

Keywords

FTS
GZO
Ga-doped ZnO
Transparent conductive thin films

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10.3938/jkps.57.1909

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title = "Effects of substrate temperature on the properties of Ga-doped ZnO prepared by using a FTS system",

abstract = "Transparent conductive Ga-doped ZnO (GZO) thin films were deposited on corning glass substrates by using facing target sputtering (FTS) systems. This study examined the properties of GZO films as a function of substrate temperature (from room temperature (R.T.) to 300° C. The sputtering targets were a 4-inch-diameter disk of GZO (ZnO:Ga2O3 = 97:3 wt.%) and a Zn metal disk. The electrical, structural and optical properties were investigated by using a 4-point probe, Hall effect measurements, X-ray diffractometry, field emitting scanning electron microscopy, and UV/VIS spectrometry. As the results, the resistivity of the as-grown GZO thin film was 9.34 × 10-4 Ω -dm, and the optical transmittances of all the deposited films was over 80% in the visible range.",

keywords = "FTS, GZO, Ga-doped ZnO, Transparent conductive thin films",

author = "Jung, {Yu Sup} and Choi, {Hyung Wook} and Park, {Yong Seo} and Kim, {Kyung Hwan} and Kim, {Woo Jae}",

year = "2010",

month = dec,

doi = "10.3938/jkps.57.1909",

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volume = "57",

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TY - JOUR

T1 - Effects of substrate temperature on the properties of Ga-doped ZnO prepared by using a FTS system

AU - Jung, Yu Sup

AU - Choi, Hyung Wook

AU - Park, Yong Seo

AU - Kim, Kyung Hwan

AU - Kim, Woo Jae

PY - 2010/12

Y1 - 2010/12

N2 - Transparent conductive Ga-doped ZnO (GZO) thin films were deposited on corning glass substrates by using facing target sputtering (FTS) systems. This study examined the properties of GZO films as a function of substrate temperature (from room temperature (R.T.) to 300° C. The sputtering targets were a 4-inch-diameter disk of GZO (ZnO:Ga2O3 = 97:3 wt.%) and a Zn metal disk. The electrical, structural and optical properties were investigated by using a 4-point probe, Hall effect measurements, X-ray diffractometry, field emitting scanning electron microscopy, and UV/VIS spectrometry. As the results, the resistivity of the as-grown GZO thin film was 9.34 × 10-4 Ω -dm, and the optical transmittances of all the deposited films was over 80% in the visible range.

AB - Transparent conductive Ga-doped ZnO (GZO) thin films were deposited on corning glass substrates by using facing target sputtering (FTS) systems. This study examined the properties of GZO films as a function of substrate temperature (from room temperature (R.T.) to 300° C. The sputtering targets were a 4-inch-diameter disk of GZO (ZnO:Ga2O3 = 97:3 wt.%) and a Zn metal disk. The electrical, structural and optical properties were investigated by using a 4-point probe, Hall effect measurements, X-ray diffractometry, field emitting scanning electron microscopy, and UV/VIS spectrometry. As the results, the resistivity of the as-grown GZO thin film was 9.34 × 10-4 Ω -dm, and the optical transmittances of all the deposited films was over 80% in the visible range.

KW - FTS

KW - GZO

KW - Ga-doped ZnO

KW - Transparent conductive thin films

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Effects of substrate temperature on the properties of Ga-doped ZnO prepared by using a FTS system

Abstract

Keywords

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