Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory

Seunghyun Kim; Do Bin Kim; Eunseon Yu; Sang Ho Lee; Seongjae Cho; Byung Gook Park

doi:10.23919/SNW.2017.8242306

Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory

Seunghyun Kim, Do Bin Kim, Eunseon Yu, Sang Ho Lee, Seongjae Cho, Byung Gook Park

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, the effects of nitride trap layer properties on location of charge centroid in charge-trap flash (CTF) memory are closely investigated. In the operations of CTF memories, charges tunnel into the nitride layer through thin oxide, unlike the floating-gate (FG) type flash memory where the charges are stored in the conductive poly-crystalline Si. Deeper understanding of distribution of the trapped charges should be beneficial in setting up an accurate compact model of CTF memory cell, where the charge centroid becomes a very practical means by which a rather large number of trapped electrons can be dealt in the more mathematical manner as a whole electron cloud. The relation between charge centroid and program voltage (V_PGM) depending on nitride layer properties is analytically studied.

Original language	English
Title of host publication	2017 Silicon Nanoelectronics Workshop, SNW 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	79-80
Number of pages	2
ISBN (Electronic)	9784863486478
DOIs	https://doi.org/10.23919/SNW.2017.8242306
State	Published - 29 Dec 2017
Event	22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan Duration: 4 Jun 2017 → 5 Jun 2017

Publication series

Name	2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume	2017-January

Conference

Conference	22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/Territory	Japan
City	Kyoto
Period	4/06/17 → 5/06/17

Bibliographical note

Funding Information:
This work was supported by Sarnsung Electronics Corp. and by the Brain Korea 21 Plus Program.

Publisher Copyright:
© 2017 JSAP.

Access to Document

10.23919/SNW.2017.8242306

Cite this

Kim, S., Kim, D. B., Yu, E., Lee, S. H., Cho, S., & Park, B. G. (2017). Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (pp. 79-80). Article 8242306 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242306

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title = "Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory",

abstract = "In this study, the effects of nitride trap layer properties on location of charge centroid in charge-trap flash (CTF) memory are closely investigated. In the operations of CTF memories, charges tunnel into the nitride layer through thin oxide, unlike the floating-gate (FG) type flash memory where the charges are stored in the conductive poly-crystalline Si. Deeper understanding of distribution of the trapped charges should be beneficial in setting up an accurate compact model of CTF memory cell, where the charge centroid becomes a very practical means by which a rather large number of trapped electrons can be dealt in the more mathematical manner as a whole electron cloud. The relation between charge centroid and program voltage (VPGM) depending on nitride layer properties is analytically studied.",

author = "Seunghyun Kim and Kim, \{Do Bin\} and Eunseon Yu and Lee, \{Sang Ho\} and Seongjae Cho and Park, \{Byung Gook\}",

note = "Funding Information: This work was supported by Sarnsung Electronics Corp. and by the Brain Korea 21 Plus Program. Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",

year = "2017",

month = dec,

day = "29",

doi = "10.23919/SNW.2017.8242306",

language = "English",

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Kim, S, Kim, DB, Yu, E, Lee, SH, Cho, S & Park, BG 2017, Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory. in 2017 Silicon Nanoelectronics Workshop, SNW 2017., 8242306, 2017 Silicon Nanoelectronics Workshop, SNW 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 79-80, 22nd Silicon Nanoelectronics Workshop, SNW 2017, Kyoto, Japan, 4/06/17. https://doi.org/10.23919/SNW.2017.8242306

Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory. / Kim, Seunghyun; Kim, Do Bin; Yu, Eunseon et al.
2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 79-80 8242306 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - In this study, the effects of nitride trap layer properties on location of charge centroid in charge-trap flash (CTF) memory are closely investigated. In the operations of CTF memories, charges tunnel into the nitride layer through thin oxide, unlike the floating-gate (FG) type flash memory where the charges are stored in the conductive poly-crystalline Si. Deeper understanding of distribution of the trapped charges should be beneficial in setting up an accurate compact model of CTF memory cell, where the charge centroid becomes a very practical means by which a rather large number of trapped electrons can be dealt in the more mathematical manner as a whole electron cloud. The relation between charge centroid and program voltage (VPGM) depending on nitride layer properties is analytically studied.

AB - In this study, the effects of nitride trap layer properties on location of charge centroid in charge-trap flash (CTF) memory are closely investigated. In the operations of CTF memories, charges tunnel into the nitride layer through thin oxide, unlike the floating-gate (FG) type flash memory where the charges are stored in the conductive poly-crystalline Si. Deeper understanding of distribution of the trapped charges should be beneficial in setting up an accurate compact model of CTF memory cell, where the charge centroid becomes a very practical means by which a rather large number of trapped electrons can be dealt in the more mathematical manner as a whole electron cloud. The relation between charge centroid and program voltage (VPGM) depending on nitride layer properties is analytically studied.

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Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory

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