Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory

Seunghyun Kim, Do Bin Kim, Eunseon Yu, Sang Ho Lee, Seongjae Cho, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, the effects of nitride trap layer properties on location of charge centroid in charge-trap flash (CTF) memory are closely investigated. In the operations of CTF memories, charges tunnel into the nitride layer through thin oxide, unlike the floating-gate (FG) type flash memory where the charges are stored in the conductive poly-crystalline Si. Deeper understanding of distribution of the trapped charges should be beneficial in setting up an accurate compact model of CTF memory cell, where the charge centroid becomes a very practical means by which a rather large number of trapped electrons can be dealt in the more mathematical manner as a whole electron cloud. The relation between charge centroid and program voltage (VPGM) depending on nitride layer properties is analytically studied.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages79-80
Number of pages2
ISBN (Electronic)9784863486478
DOIs
StatePublished - 29 Dec 2017
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 4 Jun 20175 Jun 2017

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume2017-January

Conference

Conference22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/TerritoryJapan
CityKyoto
Period4/06/175/06/17

Fingerprint

Dive into the research topics of 'Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory'. Together they form a unique fingerprint.

Cite this