Effects of niobium doping on microstructures and ferroelectric properties of bismuth titanate ferroelectric thin films

Jong Kuk Kim, Jinheung Kim, Tae Kwon Song, Sang Su Kim

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

Bi4Ti3O12 thin films doped with 3 mol.% niobium were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. The niobium-doped Bi4Ti3O12 (Nb-BiTiO) films annealed at 700 °C for 30 min in oxygen showed randomly oriented layered perovskite structures and was composed of plate-like and rod-like grains with no crack. The remanent polarization (2Pr) and coercive field (2Ec) of the Nb-BiTiO film annealed at 700 °C were 28 μC/cm2 and 110 kV/cm, respectively. In addition, the film showed good switching endurance under bipolar pulse at least up to 4.5 × 1010 cycles. Substitution of Nb in BiTiO thin films was effective for reducing the oxygen vacancies and generating good ferroelectric properties.

Original languageEnglish
Pages (from-to)225-229
Number of pages5
JournalThin Solid Films
Volume419
Issue number1-2
DOIs
StatePublished - 1 Nov 2002

Keywords

  • Capacitors
  • Ferroelectric properties
  • Scanning electron microscopy
  • X-ray diffraction

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