Effects of niobium doping on microstructures and ferroelectric properties of bismuth titanate ferroelectric thin films

Jong Kuk Kim; Jinheung Kim; Tae Kwon Song; Sang Su Kim

doi:10.1016/S0040-6090(02)00550-3

Effects of niobium doping on microstructures and ferroelectric properties of bismuth titanate ferroelectric thin films

Jong Kuk Kim, Jinheung Kim, Tae Kwon Song, Sang Su Kim

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Bi₄Ti₃O₁₂ thin films doped with 3 mol.% niobium were prepared on Pt/Ti/SiO₂/Si substrates by sol-gel method. The niobium-doped Bi₄Ti₃O₁₂ (Nb-BiTiO) films annealed at 700 °C for 30 min in oxygen showed randomly oriented layered perovskite structures and was composed of plate-like and rod-like grains with no crack. The remanent polarization (2P_r) and coercive field (2E_c) of the Nb-BiTiO film annealed at 700 °C were 28 μC/cm² and 110 kV/cm, respectively. In addition, the film showed good switching endurance under bipolar pulse at least up to 4.5 × 10¹⁰ cycles. Substitution of Nb in BiTiO thin films was effective for reducing the oxygen vacancies and generating good ferroelectric properties.

Original language	English
Pages (from-to)	225-229
Number of pages	5
Journal	Thin Solid Films
Volume	419
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)00550-3
State	Published - 1 Nov 2002

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant (KRF-2000-005-Y00070).

Keywords

Capacitors
Ferroelectric properties
Scanning electron microscopy
X-ray diffraction

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10.1016/S0040-6090(02)00550-3

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@article{cfb4cf9cc63e497aa90aec45580a984c,

title = "Effects of niobium doping on microstructures and ferroelectric properties of bismuth titanate ferroelectric thin films",

abstract = "Bi4Ti3O12 thin films doped with 3 mol.% niobium were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. The niobium-doped Bi4Ti3O12 (Nb-BiTiO) films annealed at 700 °C for 30 min in oxygen showed randomly oriented layered perovskite structures and was composed of plate-like and rod-like grains with no crack. The remanent polarization (2Pr) and coercive field (2Ec) of the Nb-BiTiO film annealed at 700 °C were 28 μC/cm2 and 110 kV/cm, respectively. In addition, the film showed good switching endurance under bipolar pulse at least up to 4.5 × 1010 cycles. Substitution of Nb in BiTiO thin films was effective for reducing the oxygen vacancies and generating good ferroelectric properties.",

keywords = "Capacitors, Ferroelectric properties, Scanning electron microscopy, X-ray diffraction",

author = "Kim, {Jong Kuk} and Jinheung Kim and Song, {Tae Kwon} and Kim, {Sang Su}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant (KRF-2000-005-Y00070). ",

year = "2002",

month = nov,

day = "1",

doi = "10.1016/S0040-6090(02)00550-3",

language = "English",

volume = "419",

pages = "225--229",

journal = "Thin Solid Films",

issn = "0040-6090",

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T1 - Effects of niobium doping on microstructures and ferroelectric properties of bismuth titanate ferroelectric thin films

AU - Kim, Jong Kuk

AU - Kim, Jinheung

AU - Song, Tae Kwon

AU - Kim, Sang Su

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant (KRF-2000-005-Y00070).

PY - 2002/11/1

Y1 - 2002/11/1

N2 - Bi4Ti3O12 thin films doped with 3 mol.% niobium were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. The niobium-doped Bi4Ti3O12 (Nb-BiTiO) films annealed at 700 °C for 30 min in oxygen showed randomly oriented layered perovskite structures and was composed of plate-like and rod-like grains with no crack. The remanent polarization (2Pr) and coercive field (2Ec) of the Nb-BiTiO film annealed at 700 °C were 28 μC/cm2 and 110 kV/cm, respectively. In addition, the film showed good switching endurance under bipolar pulse at least up to 4.5 × 1010 cycles. Substitution of Nb in BiTiO thin films was effective for reducing the oxygen vacancies and generating good ferroelectric properties.

AB - Bi4Ti3O12 thin films doped with 3 mol.% niobium were prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. The niobium-doped Bi4Ti3O12 (Nb-BiTiO) films annealed at 700 °C for 30 min in oxygen showed randomly oriented layered perovskite structures and was composed of plate-like and rod-like grains with no crack. The remanent polarization (2Pr) and coercive field (2Ec) of the Nb-BiTiO film annealed at 700 °C were 28 μC/cm2 and 110 kV/cm, respectively. In addition, the film showed good switching endurance under bipolar pulse at least up to 4.5 × 1010 cycles. Substitution of Nb in BiTiO thin films was effective for reducing the oxygen vacancies and generating good ferroelectric properties.

KW - Capacitors

KW - Ferroelectric properties

KW - Scanning electron microscopy

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=0036848980&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(02)00550-3

DO - 10.1016/S0040-6090(02)00550-3

M3 - Article

AN - SCOPUS:0036848980

SN - 0040-6090

VL - 419

SP - 225

EP - 229

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Effects of niobium doping on microstructures and ferroelectric properties of bismuth titanate ferroelectric thin films

Abstract

Bibliographical note

Keywords

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