Effects of interfacial states on asymmetric polarization switchings of epitaxial Bi4Ti3O12 thin films

  • Bae Ho Park
  • , Sang Jin Hyun
  • , S. H. Mun
  • , T. W. Noh
  • , J. Lee
  • , See Hyung Lee
  • , W. Jo

Research output: Contribution to journalConference articlepeer-review

Abstract

Epitaxial Bi4Ti3O12 (BTO) films with La0.5Sr0.5CoO3 (LSCO) or Pt bottom electrodes were grown on MgO(001) substrates by pulsed laser deposition. Surprisingly, a symmetric Pt/BTO/Pt capacitor showed a highly asymmetric polarization switching and an asymmetric Pt/BTO/LSCO capacitor revealed a nearly symmetric polarization switching. To understand these intriguing phenomena, Auger electron spectroscopy and x-ray photoemission spectroscopy depth-profiles were used. The evidences for interdiffusions at the bottom BTO/Pt interface were found. To get further understanding on the interfacial states, a capacitance-voltage (C-V) measurement was performed on the Pt/BTO/Pt capacitor. By fitting the C-V data with a back-to-back Schottky diode model, built-in voltages at the top and the bottom interfaces were determined to be 1.1 V and 3.2 V, respectively. From the obtained built-in voltages, an asymmetric band diagram for the Pt/BTO/Pt structure was suggested. Therefore, the imprint failure can be explained by existence of asymmetric interfacial states.

Original languageEnglish
Pages (from-to)3-8
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume477
StatePublished - 1997
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: 31 Mar 1997 → …

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