Effects of interfacial states on asymmetric polarization switchings of epitaxial Bi4Ti3O12 thin films

Bae Ho Park, Sang Jin Hyun, S. H. Mun, T. W. Noh, J. Lee, See Hyung Lee, W. Jo

Research output: Contribution to journalConference articlepeer-review

Abstract

Epitaxial Bi4Ti3O12 (BTO) films with La0.5Sr0.5CoO3 (LSCO) or Pt bottom electrodes were grown on MgO(001) substrates by pulsed laser deposition. Surprisingly, a symmetric Pt/BTO/Pt capacitor showed a highly asymmetric polarization switching and an asymmetric Pt/BTO/LSCO capacitor revealed a nearly symmetric polarization switching. To understand these intriguing phenomena, Auger electron spectroscopy and x-ray photoemission spectroscopy depth-profiles were used. The evidences for interdiffusions at the bottom BTO/Pt interface were found. To get further understanding on the interfacial states, a capacitance-voltage (C-V) measurement was performed on the Pt/BTO/Pt capacitor. By fitting the C-V data with a back-to-back Schottky diode model, built-in voltages at the top and the bottom interfaces were determined to be 1.1 V and 3.2 V, respectively. From the obtained built-in voltages, an asymmetric band diagram for the Pt/BTO/Pt structure was suggested. Therefore, the imprint failure can be explained by existence of asymmetric interfacial states.

Original languageEnglish
Pages (from-to)3-8
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume477
StatePublished - 1997
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: 31 Mar 1997 → …

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