Effects of interface charges on imprint of epitaxial Bi4Ti3O12 thin films

B. H. Park, T. W. Noh, J. Lee, C. Y. Kim, W. Jo

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Abstract

Using La0.5Sr0.5CoO3 (LSCO) or Pt film as a bottom electrode layer, epitaxial Bi4Ti3O12 (BTO) thin films were grown on MgO(001) substrates by pulsed laser deposition. A symmetric Pt/BTO/Pt capacitor structure shows a surprisingly large asymmetric polarization switching behavior, but a Pt/BTO/LSCO structure has a nearly symmetric P - V hysteresis. The strong asymmetric behavior in the Pt/BTO/Pt was attributed to positive charges resulting from interdiffusion at the bottom BTO/Pt interface. P - V hysteresis studies using numerous top electrode materials and Auger electron spectroscopy depth profile measurement also support formation of interfacial charges. Imprint pulse test shows that such an imprint failure cannot be recovered by applying a dc bias field.

Original languageEnglish
Pages (from-to)1101-1103
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number9
DOIs
StatePublished - 3 Mar 1997

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