Effects of interface charges on imprint of epitaxial Bi4Ti3O12 thin films

B. H. Park; T. W. Noh; J. Lee; C. Y. Kim; W. Jo

doi:10.1063/1.118497

Effects of interface charges on imprint of epitaxial Bi₄Ti₃O₁₂ thin films

B. H. Park, T. W. Noh, J. Lee, C. Y. Kim, W. Jo

Department of Physics

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

Using La_0.5Sr_0.5CoO₃ (LSCO) or Pt film as a bottom electrode layer, epitaxial Bi₄Ti₃O₁₂ (BTO) thin films were grown on MgO(001) substrates by pulsed laser deposition. A symmetric Pt/BTO/Pt capacitor structure shows a surprisingly large asymmetric polarization switching behavior, but a Pt/BTO/LSCO structure has a nearly symmetric P - V hysteresis. The strong asymmetric behavior in the Pt/BTO/Pt was attributed to positive charges resulting from interdiffusion at the bottom BTO/Pt interface. P - V hysteresis studies using numerous top electrode materials and Auger electron spectroscopy depth profile measurement also support formation of interfacial charges. Imprint pulse test shows that such an imprint failure cannot be recovered by applying a dc bias field.

Original language	English
Pages (from-to)	1101-1103
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	9
DOIs	https://doi.org/10.1063/1.118497
State	Published - 3 Mar 1997

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title = "Effects of interface charges on imprint of epitaxial Bi4Ti3O12 thin films",

abstract = "Using La0.5Sr0.5CoO3 (LSCO) or Pt film as a bottom electrode layer, epitaxial Bi4Ti3O12 (BTO) thin films were grown on MgO(001) substrates by pulsed laser deposition. A symmetric Pt/BTO/Pt capacitor structure shows a surprisingly large asymmetric polarization switching behavior, but a Pt/BTO/LSCO structure has a nearly symmetric P - V hysteresis. The strong asymmetric behavior in the Pt/BTO/Pt was attributed to positive charges resulting from interdiffusion at the bottom BTO/Pt interface. P - V hysteresis studies using numerous top electrode materials and Auger electron spectroscopy depth profile measurement also support formation of interfacial charges. Imprint pulse test shows that such an imprint failure cannot be recovered by applying a dc bias field.",

author = "Park, {B. H.} and Noh, {T. W.} and J. Lee and Kim, {C. Y.} and W. Jo",

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T1 - Effects of interface charges on imprint of epitaxial Bi4Ti3O12 thin films

AU - Park, B. H.

AU - Noh, T. W.

AU - Lee, J.

AU - Kim, C. Y.

AU - Jo, W.

PY - 1997/3/3

Y1 - 1997/3/3

N2 - Using La0.5Sr0.5CoO3 (LSCO) or Pt film as a bottom electrode layer, epitaxial Bi4Ti3O12 (BTO) thin films were grown on MgO(001) substrates by pulsed laser deposition. A symmetric Pt/BTO/Pt capacitor structure shows a surprisingly large asymmetric polarization switching behavior, but a Pt/BTO/LSCO structure has a nearly symmetric P - V hysteresis. The strong asymmetric behavior in the Pt/BTO/Pt was attributed to positive charges resulting from interdiffusion at the bottom BTO/Pt interface. P - V hysteresis studies using numerous top electrode materials and Auger electron spectroscopy depth profile measurement also support formation of interfacial charges. Imprint pulse test shows that such an imprint failure cannot be recovered by applying a dc bias field.

AB - Using La0.5Sr0.5CoO3 (LSCO) or Pt film as a bottom electrode layer, epitaxial Bi4Ti3O12 (BTO) thin films were grown on MgO(001) substrates by pulsed laser deposition. A symmetric Pt/BTO/Pt capacitor structure shows a surprisingly large asymmetric polarization switching behavior, but a Pt/BTO/LSCO structure has a nearly symmetric P - V hysteresis. The strong asymmetric behavior in the Pt/BTO/Pt was attributed to positive charges resulting from interdiffusion at the bottom BTO/Pt interface. P - V hysteresis studies using numerous top electrode materials and Auger electron spectroscopy depth profile measurement also support formation of interfacial charges. Imprint pulse test shows that such an imprint failure cannot be recovered by applying a dc bias field.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Effects of interface charges on imprint of epitaxial Bi4Ti3O12 thin films

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Effects of interface charges on imprint of epitaxial Bi₄Ti₃O₁₂ thin films