Effects of heat dissipation on unipolar resistance switching in PtNiOPt capacitors

S. H. Chang, S. C. Chae, S. B. Lee, C. Liu, T. W. Noh, J. S. Lee, B. Kahng, J. H. Jang, M. Y. Kim, D. W. Kim, C. U. Jung

Research output: Contribution to journalArticlepeer-review

139 Scopus citations


We fabricated PtNiOPt capacitor structures with various bottom electrode thicknesses tBE and investigated their resistance switching behaviors. The capacitors with tBE 50 nm exhibited typical unipolar resistance memory switching, while those with tBE ≤30 nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner tBE makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory.

Original languageEnglish
Article number183507
JournalApplied Physics Letters
Issue number18
StatePublished - 2008

Bibliographical note

Funding Information:
This work was financially supported by the Creative Research Initiatives (Functionally Integrated Oxide Heterostructure) of the Korean Science and Engineering Foundation (KOSEF).


Dive into the research topics of 'Effects of heat dissipation on unipolar resistance switching in PtNiOPt capacitors'. Together they form a unique fingerprint.

Cite this