Effects of Cu2-xS phase removal on surface potential of Cu2ZnSnS4 thin-films grown by electroplating

Gee Yeong Kim, Ju Ri Kim, William Jo, Kee Doo Lee, Jin Young Kim, Trang Thi Thu Nguyen, Seokhyun Yoon

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21 Scopus citations


Cu2ZnSnS4 (CZTS) has an optical band gap of 1.4-1.5 eV, which is similar to that of Cu(In,Ga)Se2 (CIGS), and a high absorption coefficient (>104 cm-1) in the visible light region. In previous reports, CIGS thin-film solar cells have been shown to improve the performance of the device since the secondary phase is removed by Potassium cyanide (KCN) etching treatment. Therefore, in this study we applied a KCN etching treatment on CZTS and measured the effects. We confirmed the removal of Cu2-xS via Kelvin probe force microscopy (KPFM) and Raman scattering spectroscopy. The effects of the experiment indicate that we can define with precision the location of the secondary phases, and therefore the control of the secondary phases will be easier and more efficient. Such capabilities could improve the solar cell performance of CZTS thin-films.

Original languageEnglish
Pages (from-to)1665-1668
Number of pages4
JournalCurrent Applied Physics
Issue number12
StatePublished - Dec 2014

Bibliographical note

Funding Information:
This work was supported by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No. 20113020010140 ).

Publisher Copyright:
© 2014 Elsevier B.V.


  • Cu(In,Ga)Se
  • CuZnSn(S,Se)
  • KCN etching treatment
  • Kelvin probe force microscopy
  • Kesterite


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