Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure

Sungjun Kim, Seongjae Cho, Kyung Chang Ryoo, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

In this work, the effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory (RRAM) have been investigated. Two types of RRAM devices having metal-insulator-silicon layer configuration were fabricated. One is the device with SiNx as the resistive switching layer deposited by plasma-enhanced chemical vapor deposition (PECVD), and the other has the SiNx layer prepared by low-pressure chemical vapor deposition (LPCVD). The device cell deposited by LPCVD (LP-SiNx cell afterward) demonstrated superior uniformity of switching parameters and better endurance cycles compared with the device cell deposited by PECVD (PE-SiNx cell afterward).

Original languageEnglish
Article number062201
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume33
Issue number6
DOIs
StatePublished - 1 Nov 2015

Bibliographical note

Publisher Copyright:
© 2015 American Vacuum Society.

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