Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure

Sungjun Kim; Seongjae Cho; Kyung Chang Ryoo; Byung Gook Park

doi:10.1116/1.4931946

Effects of conducting defects on resistive switching characteristics of SiN_x-based resistive random-access memory with MIS structure

Sungjun Kim, Seongjae Cho, Kyung Chang Ryoo, Byung Gook Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

In this work, the effects of conducting defects on resistive switching characteristics of SiN_x-based resistive random-access memory (RRAM) have been investigated. Two types of RRAM devices having metal-insulator-silicon layer configuration were fabricated. One is the device with SiN_x as the resistive switching layer deposited by plasma-enhanced chemical vapor deposition (PECVD), and the other has the SiN_x layer prepared by low-pressure chemical vapor deposition (LPCVD). The device cell deposited by LPCVD (LP-SiN_x cell afterward) demonstrated superior uniformity of switching parameters and better endurance cycles compared with the device cell deposited by PECVD (PE-SiN_x cell afterward).

Original language	English
Article number	062201
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	33
Issue number	6
DOIs	https://doi.org/10.1116/1.4931946
State	Published - 1 Nov 2015

Bibliographical note

Publisher Copyright:
© 2015 American Vacuum Society.

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10.1116/1.4931946

Cite this

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title = "Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure",

abstract = "In this work, the effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory (RRAM) have been investigated. Two types of RRAM devices having metal-insulator-silicon layer configuration were fabricated. One is the device with SiNx as the resistive switching layer deposited by plasma-enhanced chemical vapor deposition (PECVD), and the other has the SiNx layer prepared by low-pressure chemical vapor deposition (LPCVD). The device cell deposited by LPCVD (LP-SiNx cell afterward) demonstrated superior uniformity of switching parameters and better endurance cycles compared with the device cell deposited by PECVD (PE-SiNx cell afterward).",

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Effects of conducting defects on resistive switching characteristics of SiN_x-based resistive random-access memory with MIS structure. / Kim, Sungjun; Cho, Seongjae; Ryoo, Kyung Chang et al.
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, No. 6, 062201, 01.11.2015.

Research output: Contribution to journal › Article › peer-review

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