In this paper, we describe a novel method for selectively attaching TiO2 promoters on Pd surfaces in Pd/SiO2 catalysts using selective chemical vapor deposition (CVD). Ti was selectively deposited on Pd active sites over a SiO2 support under a hydrogen atmosphere when titanium tetraisopropoxide was used as a Ti precursor. The Pd-Ti/SiO2 catalyst modified by CVD exhibits approximately 1.8 times higher ethylene selectivity than the un-modified Pd/SiO2 catalyst in the selective hydrogenation of acetylene due to the effective geometric modification of the Pd surface, which is beneficial to ethylene selectivity, by the selectively deposited Ti species.
- Acetylene hydrogenation
- High ethylene selectivity
- Pd catalyst
- Selective chemical vapor deposition
- TiO promoters