Effect of surface kinetics on the step coverage during chemical vapor deposition

Gyeong Soon Hwang, Sang Heup Moon, Suk Woo Nam, Chee Burm Shin

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Profile evolution simulations during chemical vapor deposition based on a 2D continuum model reveal that the type of surface kinetics plays an important role in determining step coverage of films deposited in high aspect ratio trenches and vias. Linear surface kinetics, resulting from an adsorption rate limited process, is found to cause difficulty in bringing about conformal step coverage in deep narrow trenches without reducing the growth rate considerably. Under such condition, void-free filling cannot be achieved while maintaining a growth rate acceptable to integrated circuit (IC) manufacturing. The numerical study also suggests that the high tendency of the precursor for chemical equilibrium on a surface, resulting in nonlinear kinetics by a surface reaction limited process, is crucial to achieve a uniform step coverage as typically observed in SiO2 deposition from tetraethylorthosilicate (TEOS).

Original languageEnglish
Pages (from-to)2377-2380
Number of pages4
JournalJournal of Materials Research
Issue number6
StatePublished - Jun 1999


Dive into the research topics of 'Effect of surface kinetics on the step coverage during chemical vapor deposition'. Together they form a unique fingerprint.

Cite this