Effect of oxygen to argon ratio on growth of Bi4Ti3O12 thin films on Ir and IrO2 prepared by radio-frequency magnetron sputtering

W. Jo; S. M. Cho; H. M. Lee; D. C. Kim; J. U. Bu

doi:10.1143/jjap.38.2827

Effect of oxygen to argon ratio on growth of Bi₄Ti₃O₁₂ thin films on Ir and IrO₂ prepared by radio-frequency magnetron sputtering

W. Jo, S. M. Cho, H. M. Lee, D. C. Kim, J. U. Bu

Department of Physics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Bismuth titanate, Bi₄Ti₃O₁₂, thin films were grown on Ir/SiO₂/Si and IrO₂/SiO₂/Si substrates by radio-frequency magnetron sputtering. Crystallinity and surface morphology of the heterostructures were characterized over a wide range of oxygen mixing ratio (OMR) during the deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by oxygen content of sputtering ambient. Polarization reversal properties of the BTO films show P_r = +15 μC/cm² and +12 μC/cm², respectively.

Original language	English
Pages (from-to)	2827-2830
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	38
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.38.2827
State	Published - 1999

Keywords

Bismuth titanate
Ferroelectric thin films
Ir and IrO
Microstructure
Rf magentron sputtering

Access to Document

10.1143/jjap.38.2827

Cite this

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title = "Effect of oxygen to argon ratio on growth of Bi4Ti3O12 thin films on Ir and IrO2 prepared by radio-frequency magnetron sputtering",

abstract = "Bismuth titanate, Bi4Ti3O12, thin films were grown on Ir/SiO2/Si and IrO2/SiO2/Si substrates by radio-frequency magnetron sputtering. Crystallinity and surface morphology of the heterostructures were characterized over a wide range of oxygen mixing ratio (OMR) during the deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by oxygen content of sputtering ambient. Polarization reversal properties of the BTO films show Pr = +15 μC/cm2 and +12 μC/cm2, respectively.",

keywords = "Bismuth titanate, Ferroelectric thin films, Ir and IrO, Microstructure, Rf magentron sputtering",

author = "W. Jo and Cho, {S. M.} and Lee, {H. M.} and Kim, {D. C.} and Bu, {J. U.}",

year = "1999",

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language = "English",

volume = "38",

pages = "2827--2830",

journal = "Japanese Journal of Applied Physics",

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TY - JOUR

T1 - Effect of oxygen to argon ratio on growth of Bi4Ti3O12 thin films on Ir and IrO2 prepared by radio-frequency magnetron sputtering

AU - Jo, W.

AU - Cho, S. M.

AU - Lee, H. M.

AU - Kim, D. C.

AU - Bu, J. U.

PY - 1999

Y1 - 1999

N2 - Bismuth titanate, Bi4Ti3O12, thin films were grown on Ir/SiO2/Si and IrO2/SiO2/Si substrates by radio-frequency magnetron sputtering. Crystallinity and surface morphology of the heterostructures were characterized over a wide range of oxygen mixing ratio (OMR) during the deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by oxygen content of sputtering ambient. Polarization reversal properties of the BTO films show Pr = +15 μC/cm2 and +12 μC/cm2, respectively.

AB - Bismuth titanate, Bi4Ti3O12, thin films were grown on Ir/SiO2/Si and IrO2/SiO2/Si substrates by radio-frequency magnetron sputtering. Crystallinity and surface morphology of the heterostructures were characterized over a wide range of oxygen mixing ratio (OMR) during the deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by oxygen content of sputtering ambient. Polarization reversal properties of the BTO films show Pr = +15 μC/cm2 and +12 μC/cm2, respectively.

KW - Bismuth titanate

KW - Ferroelectric thin films

KW - Ir and IrO

KW - Microstructure

KW - Rf magentron sputtering

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DO - 10.1143/jjap.38.2827

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SN - 0021-4922

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EP - 2830

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

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