Effect of oxygen plasma treatment on the electrical properties in Ag/bulk ZnO Schottky diodes

Hogyoung Kim, Haeri Kim, Dong Wook Kim

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the effect of oxygen plasma treatment on the electrical properties of Ag Schottky contacts to hydrothermally-grown O-polar bulk ZnO was investigated. Schottky contacts to untreated ZnO had higher barrier heights and lower ideality factors than those to oxygen plasma treated ZnO. The measured C-V and conductance-voltage (G/ω-V) characteristics for both samples showed strong dependences on bias voltage and frequency. The increments of series resistance in small forward bias region (0-0.5 V) was larger for oxygen plasma treated ZnO, indicating that the contribution of interface states to series resistance was more significant. The interface state density was obtained from the corrected C-V and G/ω-V characteristics with considering series resistance. The higher interface state density was found for oxygen plasma treated ZnO, implying that oxygen plasma induced the interface states near the ZnO surface.

Original languageEnglish
Pages (from-to)92-97
Number of pages6
JournalVacuum
Volume101
DOIs
StatePublished - 2014

Keywords

  • Interface state density
  • O-Polar bulk ZnO
  • Oxygen plasma

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