Effect of oxygen partial pressure on the Fermi level of ZnO1-x films fabricated by pulsed laser deposition

Chul Hee Min; Suyeon Cho; Seung Hyuk Lee; Deok Yong Cho; Won Goo Park; Jae Gwan Chung; Eunha Lee; Jae Cheol Lee; Benayad Anass; Jae Hak Lee; Cheol Seong Hwang; Se Jung Oh

doi:10.1063/1.3432398

Effect of oxygen partial pressure on the Fermi level of ZnO_1-x films fabricated by pulsed laser deposition

Chul Hee Min, Suyeon Cho, Seung Hyuk Lee, Deok Yong Cho, Won Goo Park, Jae Gwan Chung, Eunha Lee, Jae Cheol Lee, Benayad Anass, Jae Hak Lee, Cheol Seong Hwang, Se Jung Oh

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We investigated the influence of oxygen deficiency on the Fermi level (E_F) of ZnO thin film prepared by pulsed laser deposition (PLD). For this purpose, we adopted in situ X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. The oxygen deficiency was effectively controlled by varying the oxygen partial pressure [P (O₂)] during the PLD. The E_F shifted by +0.6 eV as the P (O₂) decreased from 10 to 3.3 Pa. This shift indicates a significant change in the energy balance in the oxygen-deficient ZnO films. This fact suggests that the very large change in the resistivity of ZnO thin films resulting from the oxygen deficiency could be attributed to the E_F shift rather than grain boundary formation in the ZnO film.

Original language	English
Article number	201907
Journal	Applied Physics Letters
Volume	96
Issue number	20
DOIs	https://doi.org/10.1063/1.3432398
State	Published - 17 May 2010

Bibliographical note

Funding Information:
The authors thank Seung Ran Lee for the four-probe measurements. This study was supported by the KOSEF as part of the Acceleration Research Program (Grant No. R17-2008-033-01000-0) at Seoul National University, BK21 program through FPRD and a grant from Samsung Electronics.

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10.1063/1.3432398

Cite this

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title = "Effect of oxygen partial pressure on the Fermi level of ZnO1-x films fabricated by pulsed laser deposition",

abstract = "We investigated the influence of oxygen deficiency on the Fermi level (EF) of ZnO thin film prepared by pulsed laser deposition (PLD). For this purpose, we adopted in situ X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. The oxygen deficiency was effectively controlled by varying the oxygen partial pressure [P (O2)] during the PLD. The EF shifted by +0.6 eV as the P (O2) decreased from 10 to 3.3 Pa. This shift indicates a significant change in the energy balance in the oxygen-deficient ZnO films. This fact suggests that the very large change in the resistivity of ZnO thin films resulting from the oxygen deficiency could be attributed to the EF shift rather than grain boundary formation in the ZnO film.",

author = "Min, {Chul Hee} and Suyeon Cho and Lee, {Seung Hyuk} and Cho, {Deok Yong} and Park, {Won Goo} and Chung, {Jae Gwan} and Eunha Lee and Lee, {Jae Cheol} and Benayad Anass and Lee, {Jae Hak} and Hwang, {Cheol Seong} and Oh, {Se Jung}",

note = "Funding Information: The authors thank Seung Ran Lee for the four-probe measurements. This study was supported by the KOSEF as part of the Acceleration Research Program (Grant No. R17-2008-033-01000-0) at Seoul National University, BK21 program through FPRD and a grant from Samsung Electronics.",

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doi = "10.1063/1.3432398",

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T1 - Effect of oxygen partial pressure on the Fermi level of ZnO1-x films fabricated by pulsed laser deposition

AU - Min, Chul Hee

AU - Cho, Suyeon

AU - Lee, Seung Hyuk

AU - Cho, Deok Yong

AU - Park, Won Goo

AU - Chung, Jae Gwan

AU - Lee, Eunha

AU - Lee, Jae Cheol

AU - Anass, Benayad

AU - Lee, Jae Hak

AU - Hwang, Cheol Seong

AU - Oh, Se Jung

N1 - Funding Information: The authors thank Seung Ran Lee for the four-probe measurements. This study was supported by the KOSEF as part of the Acceleration Research Program (Grant No. R17-2008-033-01000-0) at Seoul National University, BK21 program through FPRD and a grant from Samsung Electronics.

PY - 2010/5/17

Y1 - 2010/5/17

N2 - We investigated the influence of oxygen deficiency on the Fermi level (EF) of ZnO thin film prepared by pulsed laser deposition (PLD). For this purpose, we adopted in situ X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. The oxygen deficiency was effectively controlled by varying the oxygen partial pressure [P (O2)] during the PLD. The EF shifted by +0.6 eV as the P (O2) decreased from 10 to 3.3 Pa. This shift indicates a significant change in the energy balance in the oxygen-deficient ZnO films. This fact suggests that the very large change in the resistivity of ZnO thin films resulting from the oxygen deficiency could be attributed to the EF shift rather than grain boundary formation in the ZnO film.

AB - We investigated the influence of oxygen deficiency on the Fermi level (EF) of ZnO thin film prepared by pulsed laser deposition (PLD). For this purpose, we adopted in situ X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. The oxygen deficiency was effectively controlled by varying the oxygen partial pressure [P (O2)] during the PLD. The EF shifted by +0.6 eV as the P (O2) decreased from 10 to 3.3 Pa. This shift indicates a significant change in the energy balance in the oxygen-deficient ZnO films. This fact suggests that the very large change in the resistivity of ZnO thin films resulting from the oxygen deficiency could be attributed to the EF shift rather than grain boundary formation in the ZnO film.

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