Effect of oxygen partial pressure on the Fermi level of ZnO1-x films fabricated by pulsed laser deposition

Chul Hee Min, Suyeon Cho, Seung Hyuk Lee, Deok Yong Cho, Won Goo Park, Jae Gwan Chung, Eunha Lee, Jae Cheol Lee, Benayad Anass, Jae Hak Lee, Cheol Seong Hwang, Se Jung Oh

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Abstract

We investigated the influence of oxygen deficiency on the Fermi level (EF) of ZnO thin film prepared by pulsed laser deposition (PLD). For this purpose, we adopted in situ X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. The oxygen deficiency was effectively controlled by varying the oxygen partial pressure [P (O2)] during the PLD. The EF shifted by +0.6 eV as the P (O2) decreased from 10 to 3.3 Pa. This shift indicates a significant change in the energy balance in the oxygen-deficient ZnO films. This fact suggests that the very large change in the resistivity of ZnO thin films resulting from the oxygen deficiency could be attributed to the EF shift rather than grain boundary formation in the ZnO film.

Original languageEnglish
Article number201907
JournalApplied Physics Letters
Volume96
Issue number20
DOIs
StatePublished - 17 May 2010

Bibliographical note

Funding Information:
The authors thank Seung Ran Lee for the four-probe measurements. This study was supported by the KOSEF as part of the Acceleration Research Program (Grant No. R17-2008-033-01000-0) at Seoul National University, BK21 program through FPRD and a grant from Samsung Electronics.

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