Effect of indium on phase-change characteristics and local chemical states of In-Ge-Sb-Te alloys

H. J. Shin; Youn Seon Kang; Anass Benayad; Ki Hong Kim; Y. M. Lee; M. C. Jung; Tae Yon Lee; Dong Seok Suh; Kijoon H.P. Kim; Cheolkyu Kim; Yoonho Khang

doi:10.1063/1.2959730

Effect of indium on phase-change characteristics and local chemical states of In-Ge-Sb-Te alloys

H. J. Shin, Youn Seon Kang, Anass Benayad, Ki Hong Kim, Y. M. Lee, M. C. Jung, Tae Yon Lee, Dong Seok Suh, Kijoon H.P. Kim, Cheolkyu Kim, Yoonho Khang

Department of Physics

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We introduce single-phase In-Ge-Sb-Te (IGST) quaternary thin film (fcc structure when crystallized) deposited by cosputtering from Ge₂ Sb₂ Te₅ (GST) and In₃ Sb₁ Te ₂ targets. This film, compared with the GST ternary system, provides a significant increase of amorphous-to-crystalline transformation temperature. High-resolution x-ray photoelectron spectroscopy (HRXPS) revealed that, with increasing In amounts, the Sb 4d and Ge 3d core peaks shift toward lower binding energies (BEs), with negligible changes in spectral linewidths, whereas the In 4d and Te 4d core peaks show insignificant changes in BEs. HRXPS interpretation suggests that the Na site in IGST can be occupied by Te, Sb, In, and vacancy, whereas in GST it is occupied only by Te.

Original language	English
Article number	021905
Journal	Applied Physics Letters
Volume	93
Issue number	2
DOIs	https://doi.org/10.1063/1.2959730
State	Published - 14 Jul 2008

Bibliographical note

Funding Information:
Y.M.L., M.-C.J., and H.J.S. would like to acknowledge the financial support of the Korea Research Foundation grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-351-C00011).

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@article{7f48f3f79ad948538100f10f3b5064af,

title = "Effect of indium on phase-change characteristics and local chemical states of In-Ge-Sb-Te alloys",

abstract = "We introduce single-phase In-Ge-Sb-Te (IGST) quaternary thin film (fcc structure when crystallized) deposited by cosputtering from Ge2 Sb2 Te5 (GST) and In3 Sb1 Te 2 targets. This film, compared with the GST ternary system, provides a significant increase of amorphous-to-crystalline transformation temperature. High-resolution x-ray photoelectron spectroscopy (HRXPS) revealed that, with increasing In amounts, the Sb 4d and Ge 3d core peaks shift toward lower binding energies (BEs), with negligible changes in spectral linewidths, whereas the In 4d and Te 4d core peaks show insignificant changes in BEs. HRXPS interpretation suggests that the Na site in IGST can be occupied by Te, Sb, In, and vacancy, whereas in GST it is occupied only by Te.",

author = "Shin, {H. J.} and Kang, {Youn Seon} and Anass Benayad and Kim, {Ki Hong} and Lee, {Y. M.} and Jung, {M. C.} and Lee, {Tae Yon} and Suh, {Dong Seok} and Kim, {Kijoon H.P.} and Cheolkyu Kim and Yoonho Khang",

note = "Funding Information: Y.M.L., M.-C.J., and H.J.S. would like to acknowledge the financial support of the Korea Research Foundation grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-351-C00011).",

year = "2008",

month = jul,

day = "14",

doi = "10.1063/1.2959730",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Effect of indium on phase-change characteristics and local chemical states of In-Ge-Sb-Te alloys

AU - Shin, H. J.

AU - Kang, Youn Seon

AU - Benayad, Anass

AU - Kim, Ki Hong

AU - Lee, Y. M.

AU - Jung, M. C.

AU - Lee, Tae Yon

AU - Suh, Dong Seok

AU - Kim, Kijoon H.P.

AU - Kim, Cheolkyu

AU - Khang, Yoonho

N1 - Funding Information: Y.M.L., M.-C.J., and H.J.S. would like to acknowledge the financial support of the Korea Research Foundation grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-351-C00011).

PY - 2008/7/14

Y1 - 2008/7/14

N2 - We introduce single-phase In-Ge-Sb-Te (IGST) quaternary thin film (fcc structure when crystallized) deposited by cosputtering from Ge2 Sb2 Te5 (GST) and In3 Sb1 Te 2 targets. This film, compared with the GST ternary system, provides a significant increase of amorphous-to-crystalline transformation temperature. High-resolution x-ray photoelectron spectroscopy (HRXPS) revealed that, with increasing In amounts, the Sb 4d and Ge 3d core peaks shift toward lower binding energies (BEs), with negligible changes in spectral linewidths, whereas the In 4d and Te 4d core peaks show insignificant changes in BEs. HRXPS interpretation suggests that the Na site in IGST can be occupied by Te, Sb, In, and vacancy, whereas in GST it is occupied only by Te.

AB - We introduce single-phase In-Ge-Sb-Te (IGST) quaternary thin film (fcc structure when crystallized) deposited by cosputtering from Ge2 Sb2 Te5 (GST) and In3 Sb1 Te 2 targets. This film, compared with the GST ternary system, provides a significant increase of amorphous-to-crystalline transformation temperature. High-resolution x-ray photoelectron spectroscopy (HRXPS) revealed that, with increasing In amounts, the Sb 4d and Ge 3d core peaks shift toward lower binding energies (BEs), with negligible changes in spectral linewidths, whereas the In 4d and Te 4d core peaks show insignificant changes in BEs. HRXPS interpretation suggests that the Na site in IGST can be occupied by Te, Sb, In, and vacancy, whereas in GST it is occupied only by Te.

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U2 - 10.1063/1.2959730

DO - 10.1063/1.2959730

M3 - Article

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SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021905

ER -

Effect of indium on phase-change characteristics and local chemical states of In-Ge-Sb-Te alloys

Abstract

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