Effect of Cr concentration on resistance switching in Cr-doped SrZrO 3 films and surface accumulation of Cr ions

Suyeon Cho, W. G. Park, Deok Yong Cho, P. Berthet, S. J. Oh

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The role of Cr ions in the resistance switching (RS) of Cr-doped SrZrO 3 films has been investigated by x-ray photoelectron spectroscopy and electric current measurements. The results show that the RS behavior depends on the Cr concentration, substrate temperature during film growth, and oxygen pressure during the postannealing process. Migration of Cr3+ ions to the surface makes the surface Cr rich, and thus, appreciable RS is observed. These observations suggest that the RS behavior can be controlled by trapping and releasing Cr carriers in the interface region between the film and the electrode.

Original languageEnglish
Article number103716
JournalJournal of Applied Physics
Volume108
Issue number10
DOIs
StatePublished - 15 Nov 2010

Fingerprint

Dive into the research topics of 'Effect of Cr concentration on resistance switching in Cr-doped SrZrO 3 films and surface accumulation of Cr ions'. Together they form a unique fingerprint.

Cite this