Effect of Cr concentration on resistance switching in Cr-doped SrZrO 3 films and surface accumulation of Cr ions

Suyeon Cho; W. G. Park; Deok Yong Cho; P. Berthet; S. J. Oh

doi:10.1063/1.3499626

Effect of Cr concentration on resistance switching in Cr-doped SrZrO ₃ films and surface accumulation of Cr ions

Suyeon Cho, W. G. Park, Deok Yong Cho, P. Berthet, S. J. Oh

Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The role of Cr ions in the resistance switching (RS) of Cr-doped SrZrO ₃ films has been investigated by x-ray photoelectron spectroscopy and electric current measurements. The results show that the RS behavior depends on the Cr concentration, substrate temperature during film growth, and oxygen pressure during the postannealing process. Migration of Cr³⁺ ions to the surface makes the surface Cr rich, and thus, appreciable RS is observed. These observations suggest that the RS behavior can be controlled by trapping and releasing Cr carriers in the interface region between the film and the electrode.

Original language	English
Article number	103716
Journal	Journal of Applied Physics
Volume	108
Issue number	10
DOIs	https://doi.org/10.1063/1.3499626
State	Published - 15 Nov 2010

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@article{a6e06441e54447889b29a88e26a36525,

title = "Effect of Cr concentration on resistance switching in Cr-doped SrZrO 3 films and surface accumulation of Cr ions",

abstract = "The role of Cr ions in the resistance switching (RS) of Cr-doped SrZrO 3 films has been investigated by x-ray photoelectron spectroscopy and electric current measurements. The results show that the RS behavior depends on the Cr concentration, substrate temperature during film growth, and oxygen pressure during the postannealing process. Migration of Cr3+ ions to the surface makes the surface Cr rich, and thus, appreciable RS is observed. These observations suggest that the RS behavior can be controlled by trapping and releasing Cr carriers in the interface region between the film and the electrode.",

author = "Suyeon Cho and Park, {W. G.} and Cho, {Deok Yong} and P. Berthet and Oh, {S. J.}",

note = "Funding Information: We thank I. G. Baek for fruitful discussions. This work was supported by NRF through Acceleration Research Program (Grant No. R17-2008-033-01000-0), Yunhak-program by Korea Research Institute of Standards and Science, Samsung Electronics, and by the BK-21 program, Korea.",

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doi = "10.1063/1.3499626",

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journal = "Journal of Applied Physics",

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T1 - Effect of Cr concentration on resistance switching in Cr-doped SrZrO 3 films and surface accumulation of Cr ions

AU - Cho, Suyeon

AU - Park, W. G.

AU - Cho, Deok Yong

AU - Berthet, P.

AU - Oh, S. J.

N1 - Funding Information: We thank I. G. Baek for fruitful discussions. This work was supported by NRF through Acceleration Research Program (Grant No. R17-2008-033-01000-0), Yunhak-program by Korea Research Institute of Standards and Science, Samsung Electronics, and by the BK-21 program, Korea.

PY - 2010/11/15

Y1 - 2010/11/15

N2 - The role of Cr ions in the resistance switching (RS) of Cr-doped SrZrO 3 films has been investigated by x-ray photoelectron spectroscopy and electric current measurements. The results show that the RS behavior depends on the Cr concentration, substrate temperature during film growth, and oxygen pressure during the postannealing process. Migration of Cr3+ ions to the surface makes the surface Cr rich, and thus, appreciable RS is observed. These observations suggest that the RS behavior can be controlled by trapping and releasing Cr carriers in the interface region between the film and the electrode.

AB - The role of Cr ions in the resistance switching (RS) of Cr-doped SrZrO 3 films has been investigated by x-ray photoelectron spectroscopy and electric current measurements. The results show that the RS behavior depends on the Cr concentration, substrate temperature during film growth, and oxygen pressure during the postannealing process. Migration of Cr3+ ions to the surface makes the surface Cr rich, and thus, appreciable RS is observed. These observations suggest that the RS behavior can be controlled by trapping and releasing Cr carriers in the interface region between the film and the electrode.

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U2 - 10.1063/1.3499626

DO - 10.1063/1.3499626

M3 - Article

AN - SCOPUS:78650297056

VL - 108

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

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Effect of Cr concentration on resistance switching in Cr-doped SrZrO 3 films and surface accumulation of Cr ions

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Effect of Cr concentration on resistance switching in Cr-doped SrZrO ₃ films and surface accumulation of Cr ions