Effect of CeO2 interlayer deposition temperature on growth behavior of Bi4Ti3O12/CeO2/MgO heterostructures

W. Jo; G. W. Park; D. W. Kim; T. W. Noh

doi:10.1063/1.117063

Effect of CeO₂ interlayer deposition temperature on growth behavior of Bi₄Ti₃O₁₂/CeO₂/MgO heterostructures

W. Jo, G. W. Park, D. W. Kim, T. W. Noh

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

CeO₂ interlayers were used to control growth behavior of Bi₄Ti₃O₁₂ thin films on MgO(001) substrates. The CeO₂ layer grown at 740°C had a preferential orientation with its c-axis normal to the film surface, so it could be used to grow an epitaxial Bi₄Ti₃O₁₂(001)/CeO₂(001)/MgO(001) heterostructure. On the other hand, the CeO₂ layer grown at 650°C showed a mixed texture of (001) and (111), and this interlayer enabled us to get a preferentially oriented Bi₄Ti₃O₁₂(117)/CeO₂(111)MgO(001) multilayer structure.

Original language	English
Pages (from-to)	1077-1079
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	8
DOIs	https://doi.org/10.1063/1.117063
State	Published - 19 Aug 1996

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@article{d31e101a7d6c42dbb775752a075a60f8,

title = "Effect of CeO2 interlayer deposition temperature on growth behavior of Bi4Ti3O12/CeO2/MgO heterostructures",

abstract = "CeO2 interlayers were used to control growth behavior of Bi4Ti3O12 thin films on MgO(001) substrates. The CeO2 layer grown at 740°C had a preferential orientation with its c-axis normal to the film surface, so it could be used to grow an epitaxial Bi4Ti3O12(001)/CeO2(001)/MgO(001) heterostructure. On the other hand, the CeO2 layer grown at 650°C showed a mixed texture of (001) and (111), and this interlayer enabled us to get a preferentially oriented Bi4Ti3O12(117)/CeO2(111)MgO(001) multilayer structure.",

author = "W. Jo and Park, {G. W.} and Kim, {D. W.} and Noh, {T. W.}",

year = "1996",

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T1 - Effect of CeO2 interlayer deposition temperature on growth behavior of Bi4Ti3O12/CeO2/MgO heterostructures

AU - Jo, W.

AU - Park, G. W.

AU - Kim, D. W.

AU - Noh, T. W.

PY - 1996/8/19

Y1 - 1996/8/19

N2 - CeO2 interlayers were used to control growth behavior of Bi4Ti3O12 thin films on MgO(001) substrates. The CeO2 layer grown at 740°C had a preferential orientation with its c-axis normal to the film surface, so it could be used to grow an epitaxial Bi4Ti3O12(001)/CeO2(001)/MgO(001) heterostructure. On the other hand, the CeO2 layer grown at 650°C showed a mixed texture of (001) and (111), and this interlayer enabled us to get a preferentially oriented Bi4Ti3O12(117)/CeO2(111)MgO(001) multilayer structure.

AB - CeO2 interlayers were used to control growth behavior of Bi4Ti3O12 thin films on MgO(001) substrates. The CeO2 layer grown at 740°C had a preferential orientation with its c-axis normal to the film surface, so it could be used to grow an epitaxial Bi4Ti3O12(001)/CeO2(001)/MgO(001) heterostructure. On the other hand, the CeO2 layer grown at 650°C showed a mixed texture of (001) and (111), and this interlayer enabled us to get a preferentially oriented Bi4Ti3O12(117)/CeO2(111)MgO(001) multilayer structure.

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ER -

Effect of CeO2 interlayer deposition temperature on growth behavior of Bi4Ti3O12/CeO2/MgO heterostructures

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Effect of CeO₂ interlayer deposition temperature on growth behavior of Bi₄Ti₃O₁₂/CeO₂/MgO heterostructures