Abstract
CeO2 interlayers were used to control growth behavior of Bi4Ti3O12 thin films on MgO(001) substrates. The CeO2 layer grown at 740°C had a preferential orientation with its c-axis normal to the film surface, so it could be used to grow an epitaxial Bi4Ti3O12(001)/CeO2(001)/MgO(001) heterostructure. On the other hand, the CeO2 layer grown at 650°C showed a mixed texture of (001) and (111), and this interlayer enabled us to get a preferentially oriented Bi4Ti3O12(117)/CeO2(111)MgO(001) multilayer structure.
Original language | English |
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Pages (from-to) | 1077-1079 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 8 |
DOIs | |
State | Published - 19 Aug 1996 |