Effect of CeO2 interlayer deposition temperature on growth behavior of Bi4Ti3O12/CeO2/MgO heterostructures

W. Jo, G. W. Park, D. W. Kim, T. W. Noh

Research output: Contribution to journalArticlepeer-review

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Abstract

CeO2 interlayers were used to control growth behavior of Bi4Ti3O12 thin films on MgO(001) substrates. The CeO2 layer grown at 740°C had a preferential orientation with its c-axis normal to the film surface, so it could be used to grow an epitaxial Bi4Ti3O12(001)/CeO2(001)/MgO(001) heterostructure. On the other hand, the CeO2 layer grown at 650°C showed a mixed texture of (001) and (111), and this interlayer enabled us to get a preferentially oriented Bi4Ti3O12(117)/CeO2(111)MgO(001) multilayer structure.

Original languageEnglish
Pages (from-to)1077-1079
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number8
DOIs
StatePublished - 19 Aug 1996

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