Effect of bottom electrode on resistive switching voltages in ag-based electrochemical metallization memory device

Sungjun Kim; Seongjae Cho; Byung Gook Park

doi:10.5573/JSTS.2016.16.2.147

Effect of bottom electrode on resistive switching voltages in ag-based electrochemical metallization memory device

Sungjun Kim, Seongjae Cho, Byung Gook Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having Ag/Si₃N₄/TiN and Ag/Si₃N₄/p⁺ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

Original language	English
Pages (from-to)	147-152
Number of pages	6
Journal	Journal of Semiconductor Technology and Science
Volume	16
Issue number	2
DOIs	https://doi.org/10.5573/JSTS.2016.16.2.147
State	Published - Apr 2016

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (2015R1A2A1A01007307) and also supported by NRF funded by MISP (NRF-2014R1A1A1003644).

Publisher Copyright:
© 2016, Institute of Electronics Engineers of Korea. All rights reserved.

Keywords

Conductive-bridge random-access memory
Electrochemical metallization memory
Metal-insulator-metal
Metal-insulator-silicon
Silicon nitride

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10.5573/JSTS.2016.16.2.147

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title = "Effect of bottom electrode on resistive switching voltages in ag-based electrochemical metallization memory device",

abstract = "In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having Ag/Si3N4/TiN and Ag/Si3N4/p+ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.",

keywords = "Conductive-bridge random-access memory, Electrochemical metallization memory, Metal-insulator-metal, Metal-insulator-silicon, Silicon nitride",

author = "Sungjun Kim and Seongjae Cho and Park, {Byung Gook}",

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doi = "10.5573/JSTS.2016.16.2.147",

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PY - 2016/4

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N2 - In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having Ag/Si3N4/TiN and Ag/Si3N4/p+ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

AB - In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having Ag/Si3N4/TiN and Ag/Si3N4/p+ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

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Effect of bottom electrode on resistive switching voltages in ag-based electrochemical metallization memory device

Abstract

Bibliographical note

Keywords

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