Dual-gated BN-sandwiched multilayer graphene field-effect transistor fabricated by stamping transfer method and self-aligned contact

Jeongmin Park, Haeyong Kang, Dongsub Chung, Joonggyu Kim, Jeong Gyun Kim, Yoojoo Yun, Young Hee Lee, Dongseok Suh

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

To fabricate a BN-sandwiched multilayer graphene field-effect transistor, we developed a self-aligned contact scheme in combination with optimized stamping processes for the stacking of two-dimensional (2D) materials. By using a self-aligned contact method during device fabrication, we can skip the dry-etch process which requires an exact etch-stop at the surface of the graphene layer and is not easy to control. In the structure of a dual-gate transistor, successful device operation at low temperature with and without magnetic fields proves that the self-alignment contact can be an effective tool for reliable device fabrication using 2D materials.

Original languageEnglish
Pages (from-to)1184-1187
Number of pages4
JournalCurrent Applied Physics
Volume15
Issue number10
DOIs
StatePublished - 4 Oct 2015

Bibliographical note

Funding Information:
This work was supported by the Basic Science Research Program (No. 2013R1A1A1076063 ) through the National Research Foundation of Korea (NRF) , funded by the Ministry of Science, ICT & Future Planning, Republic of Korea.

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Keywords

  • Graphene field-effect transistor
  • Self-aligned contact
  • Stamping transfer method

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