To fabricate a BN-sandwiched multilayer graphene field-effect transistor, we developed a self-aligned contact scheme in combination with optimized stamping processes for the stacking of two-dimensional (2D) materials. By using a self-aligned contact method during device fabrication, we can skip the dry-etch process which requires an exact etch-stop at the surface of the graphene layer and is not easy to control. In the structure of a dual-gate transistor, successful device operation at low temperature with and without magnetic fields proves that the self-alignment contact can be an effective tool for reliable device fabrication using 2D materials.
Bibliographical noteFunding Information:
This work was supported by the Basic Science Research Program (No. 2013R1A1A1076063 ) through the National Research Foundation of Korea (NRF) , funded by the Ministry of Science, ICT & Future Planning, Republic of Korea.
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- Graphene field-effect transistor
- Self-aligned contact
- Stamping transfer method