Dual gate positive feedback field-effect transistor for low power analog circuit

Min Woo Kwon; Sungmin Hwang; Myung Hyun Baek; Seongjae Cho; Byung Gook Park

doi:10.23919/SNW.2017.8242324

Dual gate positive feedback field-effect transistor for low power analog circuit

Min Woo Kwon, Sungmin Hwang, Myung Hyun Baek, Seongjae Cho, Byung Gook Park

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

In this work, we investigate the dual gate positive feedback field-effect transistor (FBFET) using DC and transient TCAD simulation. I-V characteristics, subthreshold swing, and transient characteristics are analyzed. The FBFET has steep switching property and low off current. We design an inverter that can low power operate with the FBFET. By using the FBFET, the stand-by current is effectively suppressed in analog circuit.

Original language	English
Title of host publication	2017 Silicon Nanoelectronics Workshop, SNW 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	115-116
Number of pages	2
ISBN (Electronic)	9784863486478
DOIs	https://doi.org/10.23919/SNW.2017.8242324
State	Published - 29 Dec 2017
Event	22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan Duration: 4 Jun 2017 → 5 Jun 2017

Publication series

Name	2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume	2017-January

Conference

Conference	22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/Territory	Japan
City	Kyoto
Period	4/06/17 → 5/06/17

Bibliographical note

Funding Information:
This research was supported by Nano' Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICf and Future Planning(2016M3A7B4910348). and the Brain Korea 21 Plus Project in 2017.

Publisher Copyright:
© 2017 JSAP.

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10.23919/SNW.2017.8242324

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Kwon, M. W., Hwang, S., Baek, M. H., Cho, S., & Park, B. G. (2017). Dual gate positive feedback field-effect transistor for low power analog circuit. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (pp. 115-116). Article 8242324 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242324

@inproceedings{e9578bfa7fac46ebae7bb2277dba587e,

title = "Dual gate positive feedback field-effect transistor for low power analog circuit",

abstract = "In this work, we investigate the dual gate positive feedback field-effect transistor (FBFET) using DC and transient TCAD simulation. I-V characteristics, subthreshold swing, and transient characteristics are analyzed. The FBFET has steep switching property and low off current. We design an inverter that can low power operate with the FBFET. By using the FBFET, the stand-by current is effectively suppressed in analog circuit.",

author = "Kwon, {Min Woo} and Sungmin Hwang and Baek, {Myung Hyun} and Seongjae Cho and Park, {Byung Gook}",

note = "Funding Information: This research was supported by Nano' Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICf and Future Planning(2016M3A7B4910348). and the Brain Korea 21 Plus Project in 2017. Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",

year = "2017",

month = dec,

day = "29",

doi = "10.23919/SNW.2017.8242324",

language = "English",

series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",

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Kwon, MW, Hwang, S, Baek, MH, Cho, S & Park, BG 2017, Dual gate positive feedback field-effect transistor for low power analog circuit. in 2017 Silicon Nanoelectronics Workshop, SNW 2017., 8242324, 2017 Silicon Nanoelectronics Workshop, SNW 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 115-116, 22nd Silicon Nanoelectronics Workshop, SNW 2017, Kyoto, Japan, 4/06/17. https://doi.org/10.23919/SNW.2017.8242324

Dual gate positive feedback field-effect transistor for low power analog circuit. / Kwon, Min Woo; Hwang, Sungmin; Baek, Myung Hyun et al.
2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 115-116 8242324 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hwang, Sungmin

AU - Baek, Myung Hyun

AU - Cho, Seongjae

AU - Park, Byung Gook

N1 - Funding Information: This research was supported by Nano' Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICf and Future Planning(2016M3A7B4910348). and the Brain Korea 21 Plus Project in 2017. Publisher Copyright: © 2017 JSAP.

PY - 2017/12/29

Y1 - 2017/12/29

N2 - In this work, we investigate the dual gate positive feedback field-effect transistor (FBFET) using DC and transient TCAD simulation. I-V characteristics, subthreshold swing, and transient characteristics are analyzed. The FBFET has steep switching property and low off current. We design an inverter that can low power operate with the FBFET. By using the FBFET, the stand-by current is effectively suppressed in analog circuit.

AB - In this work, we investigate the dual gate positive feedback field-effect transistor (FBFET) using DC and transient TCAD simulation. I-V characteristics, subthreshold swing, and transient characteristics are analyzed. The FBFET has steep switching property and low off current. We design an inverter that can low power operate with the FBFET. By using the FBFET, the stand-by current is effectively suppressed in analog circuit.

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M3 - Conference contribution

AN - SCOPUS:85051039210

T3 - 2017 Silicon Nanoelectronics Workshop, SNW 2017

SP - 115

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BT - 2017 Silicon Nanoelectronics Workshop, SNW 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 22nd Silicon Nanoelectronics Workshop, SNW 2017

Y2 - 4 June 2017 through 5 June 2017

ER -

Dual gate positive feedback field-effect transistor for low power analog circuit

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