Doping-level Dependences of Switching Speeds and the Retention Characteristics of Resistive Switching Pt/SrTio3 Junctions

Minji Gwon, Eunsongyi Lee, Ahrum Sohn, El Mostafa Bourim, Dong Wook Kim

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We investigated the resistive switching behaviors of metal/oxide junctions consisting of Pt electrodes and Nb-doped SrTiO3(001) single crystals. The doping level affected the resistive switching ratio and the transport mechanism (thermionic emission for low doping and thermionic field emission for high doping). Pulse-mode switching experiments showed that an increase in the interface electric field by several times could enhance the switching speed by hundreds of times. The dependence of the retention time on the doping ratio was also examined. All the results suggested that ionic migration and carrier trapping could explain the resistive switching characteristics.

Original languageEnglish
Pages (from-to)1432-1436
Number of pages5
JournalJournal of the Korean Physical Society
Volume57
Issue number6
DOIs
StatePublished - Dec 2010

Keywords

  • Resistive switching
  • Retention
  • SrTiO
  • Switching speed

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