Doping-level Dependences of Switching Speeds and the Retention Characteristics of Resistive Switching Pt/SrTio3 Junctions

Minji Gwon; Eunsongyi Lee; Ahrum Sohn; El Mostafa Bourim; Dong Wook Kim

doi:10.3938/jkps.57.1432

Doping-level Dependences of Switching Speeds and the Retention Characteristics of Resistive Switching Pt/SrTio₃ Junctions

Minji Gwon, Eunsongyi Lee, Ahrum Sohn, El Mostafa Bourim, Dong Wook Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We investigated the resistive switching behaviors of metal/oxide junctions consisting of Pt electrodes and Nb-doped SrTiO₃(001) single crystals. The doping level affected the resistive switching ratio and the transport mechanism (thermionic emission for low doping and thermionic field emission for high doping). Pulse-mode switching experiments showed that an increase in the interface electric field by several times could enhance the switching speed by hundreds of times. The dependence of the retention time on the doping ratio was also examined. All the results suggested that ionic migration and carrier trapping could explain the resistive switching characteristics.

Original language	English
Pages (from-to)	1432-1436
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	57
Issue number	6
DOIs	https://doi.org/10.3938/jkps.57.1432
State	Published - Dec 2010

Keywords

Resistive switching
Retention
SrTiO
Switching speed

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10.3938/jkps.57.1432

Cite this

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title = "Doping-level Dependences of Switching Speeds and the Retention Characteristics of Resistive Switching Pt/SrTio3 Junctions",

abstract = "We investigated the resistive switching behaviors of metal/oxide junctions consisting of Pt electrodes and Nb-doped SrTiO3(001) single crystals. The doping level affected the resistive switching ratio and the transport mechanism (thermionic emission for low doping and thermionic field emission for high doping). Pulse-mode switching experiments showed that an increase in the interface electric field by several times could enhance the switching speed by hundreds of times. The dependence of the retention time on the doping ratio was also examined. All the results suggested that ionic migration and carrier trapping could explain the resistive switching characteristics.",

keywords = "Resistive switching, Retention, SrTiO, Switching speed",

author = "Minji Gwon and Eunsongyi Lee and Ahrum Sohn and Bourim, {El Mostafa} and Kim, {Dong Wook}",

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T1 - Doping-level Dependences of Switching Speeds and the Retention Characteristics of Resistive Switching Pt/SrTio3 Junctions

AU - Gwon, Minji

AU - Lee, Eunsongyi

AU - Sohn, Ahrum

AU - Bourim, El Mostafa

AU - Kim, Dong Wook

PY - 2010/12

Y1 - 2010/12

N2 - We investigated the resistive switching behaviors of metal/oxide junctions consisting of Pt electrodes and Nb-doped SrTiO3(001) single crystals. The doping level affected the resistive switching ratio and the transport mechanism (thermionic emission for low doping and thermionic field emission for high doping). Pulse-mode switching experiments showed that an increase in the interface electric field by several times could enhance the switching speed by hundreds of times. The dependence of the retention time on the doping ratio was also examined. All the results suggested that ionic migration and carrier trapping could explain the resistive switching characteristics.

AB - We investigated the resistive switching behaviors of metal/oxide junctions consisting of Pt electrodes and Nb-doped SrTiO3(001) single crystals. The doping level affected the resistive switching ratio and the transport mechanism (thermionic emission for low doping and thermionic field emission for high doping). Pulse-mode switching experiments showed that an increase in the interface electric field by several times could enhance the switching speed by hundreds of times. The dependence of the retention time on the doping ratio was also examined. All the results suggested that ionic migration and carrier trapping could explain the resistive switching characteristics.

KW - Resistive switching

KW - Retention

KW - SrTiO

KW - Switching speed

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