Doping: Ion implantation

In this section on ion implantation, one of the most famous doping techniques, information associated with both theoretical and experimental aspects will be provided. For the former aspects, we address the basic equipment anatomy associated with the major parts of the ion implanter, the tools related with ion implantation other than the implanter, and the applications of ion implantation. For the latter, experimental sources are provided and we take a closer look into the physics of ion implantation and criteria for process control. The experimental resources have been obtained from the periodic semiconductor process studies held for graduate students and field engineers at the Inter-university Semiconductor Research Center (ISRC) of Seoul National University, Seoul, Korea. These have been conducted for more than 10 years and are still being conducted today. The ion implanter and the other process tools installed in the ISRC have been used throughout the chapter.