Abstract
Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b′]dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.
| Original language | English |
|---|---|
| Pages (from-to) | 57-62 |
| Number of pages | 6 |
| Journal | Advanced Materials |
| Volume | 28 |
| Issue number | 1 |
| DOIs | |
| State | Published - 6 Jan 2016 |
Bibliographical note
Publisher Copyright:© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords
- contact resistance
- linear mobility
- organic electronics
- polymer field-effect transistors
- threshold voltage
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