Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors

Byoung Hoon Lee, Guillermo C. Bazan, Alan J. Heeger

Research output: Contribution to journalArticlepeer-review

112 Scopus citations


Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b′]dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.

Original languageEnglish
Pages (from-to)57-62
Number of pages6
JournalAdvanced Materials
Issue number1
StatePublished - 6 Jan 2016

Bibliographical note

Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


  • contact resistance
  • linear mobility
  • organic electronics
  • polymer field-effect transistors
  • threshold voltage


Dive into the research topics of 'Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors'. Together they form a unique fingerprint.

Cite this