@article{bc45e54b3c904c0c92b7a1315d797ed7,
title = "Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors",
abstract = "Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b′]dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.",
keywords = "contact resistance, linear mobility, organic electronics, polymer field-effect transistors, threshold voltage",
author = "Lee, {Byoung Hoon} and Bazan, {Guillermo C.} and Heeger, {Alan J.}",
note = "Funding Information: This work was supported by the National Science Foundation (DMR 0856060 and DMR 1436263). The authors thank Dr. Ben B. Y. Hsu for his help and valuable comments and Dr. Tom Mates for helpful discussion on XPS data analysis. The nanofabrication was performed in the UCSB nanofabrication facility, part of the NSF funded NNIN network. The XPS facility was supported by the National Science Foundation under grant number DMR-1121053. Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",
year = "2016",
month = jan,
day = "6",
doi = "10.1002/adma.201504307",
language = "English",
volume = "28",
pages = "57--62",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-Blackwell",
number = "1",
}