Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors

Byoung Hoon Lee; Guillermo C. Bazan; Alan J. Heeger

doi:10.1002/adma.201504307

Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors

Byoung Hoon Lee, Guillermo C. Bazan, Alan J. Heeger

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

115 Scopus citations

Abstract

Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b′]dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.

Original language	English
Pages (from-to)	57-62
Number of pages	6
Journal	Advanced Materials
Volume	28
Issue number	1
DOIs	https://doi.org/10.1002/adma.201504307
State	Published - 6 Jan 2016

Bibliographical note

Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords

contact resistance
linear mobility
organic electronics
polymer field-effect transistors
threshold voltage

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AU - Heeger, Alan J.

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AB - Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b′]dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.

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KW - threshold voltage

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Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors

Abstract

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Keywords

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