Dopant concentration dependent resistive switching characteristics in Cu/SiNx/Si structure

Sungjun Kim, Min Hwi Kim, Tae Hyeon Kim, Seongjae Cho, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In this paper, dopant concentration dependent resistive switching characteristics in a SiNx-based resistive random-access memory (RRAM) device are investigated. The device with low dopant concentration (∼1018 cm-3) shows only unipolar switching due to the suppressed reverse current. The result of conduction mechanism analyses for LRS indicates that conducting transport follows the thermionic emission, which has a strong temperature dependence. On the other hand, both unipolar and bipolar switching are observed in the device with high dopant concentration (∼1020 cm-3). It is found that forward current/reverse current (F/R) ratio can be maximized by reducing doping concentration and compliance current.

Original languageEnglish
Pages (from-to)479-483
Number of pages5
JournalJournal of Alloys and Compounds
Volume686
DOIs
StatePublished - 25 Nov 2016

Bibliographical note

Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.

Keywords

  • Dopant concentration
  • Resistive random-access memory (RRAM)
  • Silicon nitride (SiN)
  • Switching mechanism

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