Dopant concentration dependent resistive switching characteristics in Cu/SiNx/Si structure

Sungjun Kim; Min Hwi Kim; Tae Hyeon Kim; Seongjae Cho; Byung Gook Park

doi:10.1016/j.jallcom.2016.06.055

Dopant concentration dependent resistive switching characteristics in Cu/SiN_x/Si structure

Sungjun Kim, Min Hwi Kim, Tae Hyeon Kim, Seongjae Cho, Byung Gook Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this paper, dopant concentration dependent resistive switching characteristics in a SiN_x-based resistive random-access memory (RRAM) device are investigated. The device with low dopant concentration (∼10¹⁸ cm^-3) shows only unipolar switching due to the suppressed reverse current. The result of conduction mechanism analyses for LRS indicates that conducting transport follows the thermionic emission, which has a strong temperature dependence. On the other hand, both unipolar and bipolar switching are observed in the device with high dopant concentration (∼10²⁰ cm^-3). It is found that forward current/reverse current (F/R) ratio can be maximized by reducing doping concentration and compliance current.

Original language	English
Pages (from-to)	479-483
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	686
DOIs	https://doi.org/10.1016/j.jallcom.2016.06.055
State	Published - 25 Nov 2016

Bibliographical note

Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.

Keywords

Dopant concentration
Resistive random-access memory (RRAM)
Silicon nitride (SiN)
Switching mechanism

Access to Document

10.1016/j.jallcom.2016.06.055

Cite this

@article{4c3e490e3df54eaeaa0058de7e217113,

title = "Dopant concentration dependent resistive switching characteristics in Cu/SiNx/Si structure",

abstract = "In this paper, dopant concentration dependent resistive switching characteristics in a SiNx-based resistive random-access memory (RRAM) device are investigated. The device with low dopant concentration (∼1018 cm-3) shows only unipolar switching due to the suppressed reverse current. The result of conduction mechanism analyses for LRS indicates that conducting transport follows the thermionic emission, which has a strong temperature dependence. On the other hand, both unipolar and bipolar switching are observed in the device with high dopant concentration (∼1020 cm-3). It is found that forward current/reverse current (F/R) ratio can be maximized by reducing doping concentration and compliance current.",

keywords = "Dopant concentration, Resistive random-access memory (RRAM), Silicon nitride (SiN), Switching mechanism",

author = "Sungjun Kim and Kim, {Min Hwi} and Kim, {Tae Hyeon} and Seongjae Cho and Park, {Byung Gook}",

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T1 - Dopant concentration dependent resistive switching characteristics in Cu/SiNx/Si structure

AU - Kim, Sungjun

AU - Kim, Min Hwi

AU - Kim, Tae Hyeon

AU - Cho, Seongjae

AU - Park, Byung Gook

PY - 2016/11/25

Y1 - 2016/11/25

N2 - In this paper, dopant concentration dependent resistive switching characteristics in a SiNx-based resistive random-access memory (RRAM) device are investigated. The device with low dopant concentration (∼1018 cm-3) shows only unipolar switching due to the suppressed reverse current. The result of conduction mechanism analyses for LRS indicates that conducting transport follows the thermionic emission, which has a strong temperature dependence. On the other hand, both unipolar and bipolar switching are observed in the device with high dopant concentration (∼1020 cm-3). It is found that forward current/reverse current (F/R) ratio can be maximized by reducing doping concentration and compliance current.

AB - In this paper, dopant concentration dependent resistive switching characteristics in a SiNx-based resistive random-access memory (RRAM) device are investigated. The device with low dopant concentration (∼1018 cm-3) shows only unipolar switching due to the suppressed reverse current. The result of conduction mechanism analyses for LRS indicates that conducting transport follows the thermionic emission, which has a strong temperature dependence. On the other hand, both unipolar and bipolar switching are observed in the device with high dopant concentration (∼1020 cm-3). It is found that forward current/reverse current (F/R) ratio can be maximized by reducing doping concentration and compliance current.

KW - Dopant concentration

KW - Resistive random-access memory (RRAM)

KW - Silicon nitride (SiN)

KW - Switching mechanism

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