Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

Jungho Park; Jonathan Ho; Hoyeol Yun; Myeongjin Park; Jung Hyun Lee; Miri Seo; Eleanor E.B. Campbell; Changhee Lee; Seungmoon Pyo; Sang Wook Lee

doi:10.1007/s00339-012-7411-7

Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

Jungho Park
, Jonathan Ho
, Hoyeol Yun
, Myeongjin Park
, Jung Hyun Lee
, Miri Seo
, Eleanor E.B. Campbell
, Changhee Lee
, Seungmoon Pyo
, Sang Wook Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field-effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.

Original language	English
Pages (from-to)	1051-1056
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	111
Issue number	4
DOIs	https://doi.org/10.1007/s00339-012-7411-7
State	Published - Jun 2013

Bibliographical note

Funding Information:
This work was supported through BSR (2011-0021207), WCU (R31-2008-000-10057-0), and framework of international cooperation programs by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology.

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title = "Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists",

abstract = "We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field-effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.",

author = "Jungho Park and Jonathan Ho and Hoyeol Yun and Myeongjin Park and Lee, \{Jung Hyun\} and Miri Seo and Campbell, \{Eleanor E.B.\} and Changhee Lee and Seungmoon Pyo and Lee, \{Sang Wook\}",

note = "Funding Information: This work was supported through BSR (2011-0021207), WCU (R31-2008-000-10057-0), and framework of international cooperation programs by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology.",

year = "2013",

month = jun,

doi = "10.1007/s00339-012-7411-7",

language = "English",

volume = "111",

pages = "1051--1056",

journal = "Applied Physics A: Materials Science and Processing",

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T1 - Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

AU - Park, Jungho

AU - Ho, Jonathan

AU - Yun, Hoyeol

AU - Park, Myeongjin

AU - Lee, Jung Hyun

AU - Seo, Miri

AU - Campbell, Eleanor E.B.

AU - Lee, Changhee

AU - Pyo, Seungmoon

AU - Lee, Sang Wook

N1 - Funding Information: This work was supported through BSR (2011-0021207), WCU (R31-2008-000-10057-0), and framework of international cooperation programs by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology.

PY - 2013/6

Y1 - 2013/6

N2 - We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field-effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.

AB - We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field-effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.

UR - https://www.scopus.com/pages/publications/84878019207

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DO - 10.1007/s00339-012-7411-7

M3 - Article

AN - SCOPUS:84878019207

SN - 0947-8396

VL - 111

SP - 1051

EP - 1056

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 4

ER -

Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

Abstract

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