We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field-effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.
|Number of pages||6|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Jun 2013|