We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field-effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.
|Number of pages||6|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Jun 2013|
Bibliographical noteFunding Information:
This work was supported through BSR (2011-0021207), WCU (R31-2008-000-10057-0), and framework of international cooperation programs by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology.