Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

Jungho Park; Jonathan Ho; Hoyeol Yun; Myeongjin Park; Jung Hyun Lee; Miri Seo; Eleanor E.B. Campbell; Changhee Lee; Seungmoon Pyo; Sang Wook Lee

doi:10.1007/s00339-012-7411-7

Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

Jungho Park, Jonathan Ho, Hoyeol Yun, Myeongjin Park, Jung Hyun Lee, Miri Seo, Eleanor E.B. Campbell, Changhee Lee, Seungmoon Pyo, Sang Wook Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field-effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.

Original language	English
Pages (from-to)	1051-1056
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	111
Issue number	4
DOIs	https://doi.org/10.1007/s00339-012-7411-7
State	Published - Jun 2013

Bibliographical note

Funding Information:
This work was supported through BSR (2011-0021207), WCU (R31-2008-000-10057-0), and framework of international cooperation programs by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology.

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@article{b548dc8c71004e5bae23870ad03fedd8,

title = "Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists",

abstract = "We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field-effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.",

author = "Jungho Park and Jonathan Ho and Hoyeol Yun and Myeongjin Park and Lee, {Jung Hyun} and Miri Seo and Campbell, {Eleanor E.B.} and Changhee Lee and Seungmoon Pyo and Lee, {Sang Wook}",

note = "Funding Information: This work was supported through BSR (2011-0021207), WCU (R31-2008-000-10057-0), and framework of international cooperation programs by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology.",

year = "2013",

month = jun,

doi = "10.1007/s00339-012-7411-7",

language = "English",

volume = "111",

pages = "1051--1056",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "4",

}

TY - JOUR

T1 - Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

AU - Park, Jungho

AU - Ho, Jonathan

AU - Yun, Hoyeol

AU - Park, Myeongjin

AU - Lee, Jung Hyun

AU - Seo, Miri

AU - Campbell, Eleanor E.B.

AU - Lee, Changhee

AU - Pyo, Seungmoon

AU - Lee, Sang Wook

N1 - Funding Information: This work was supported through BSR (2011-0021207), WCU (R31-2008-000-10057-0), and framework of international cooperation programs by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology.

PY - 2013/6

Y1 - 2013/6

N2 - We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field-effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.

AB - We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field-effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.

UR - http://www.scopus.com/inward/record.url?scp=84878019207&partnerID=8YFLogxK

U2 - 10.1007/s00339-012-7411-7

DO - 10.1007/s00339-012-7411-7

M3 - Article

AN - SCOPUS:84878019207

SN - 0947-8396

VL - 111

SP - 1051

EP - 1056

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 4

ER -

Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

Abstract

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