Direct investigation on energy bandgap of Si added ZnSnO system for stability enhancement by X-ray photoelectron spectroscopy

Engineering & Materials Science

• Activation energy 21%
• Amorphous silicon 84%
• Band structure 57%
• Binding energy 32%
• Chemical properties 22%
• Electric properties 21%
• Energy gap 93%
• Magnetron sputtering 27%
• Metals 13%
• Microscopic examination 22%
• Oxygen vacancies 63%
• Photoelectron spectroscopy 69%
• Positive ions 25%
• Spectrometers 24%
• Temperature 16%
• Thermal stress 20%
• Thermodynamic stability 21%
• Tin oxides 84%
• X ray photoelectron spectroscopy 100%
• X rays 37%
• Zinc oxide 81%

Chemical Compounds

• Ambient Reaction Temperature 11%
• Amorphous Material 42%
• Band Gap 61%
• Binding Energy 18%
• Density of State 22%
• Dioxygen 19%
• Electrical Property 17%
• Electronic Band Structure 41%
• Energy 38%
• Magnetron Sputtering 23%
• Metal Ion 12%
• Photoelectron Spectroscopy 40%
• Reaction Activation Energy 14%
• Thermal Stability 13%
• X-Ray Photoelectron Spectroscopy 57%