Direct detection of hole gas in Ge-Si core-shell nanowires by enhanced Raman scattering

Shixiong Zhang; Francisco J. Lopez; Jerome K. Hyun; Lincoln J. Lauhon

doi:10.1021/nl102316b

Direct detection of hole gas in Ge-Si core-shell nanowires by enhanced Raman scattering

Shixiong Zhang, Francisco J. Lopez, Jerome K. Hyun, Lincoln J. Lauhon

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

We report the direct detection of hole accumulation in the core of Ge-Si core-shell nanowire heterostructures by a Fano resonance between free holes and the F_2g mode in Raman spectra. Raman enhancements of 10-10 000 with respect to bulk were observed and explained using finite difference time domain simulations of the electric fields concentrated in the nanowire. Numerical modeling of the radial carrier concentration revealed that the asymmetric line-shape is strongly influenced by inhomogeneous broadening.

Original language	English
Pages (from-to)	4483-4487
Number of pages	5
Journal	Nano Letters
Volume	10
Issue number	11
DOIs	https://doi.org/10.1021/nl102316b
State	Published - 10 Nov 2010

Keywords

Fano resonance
Nanowire
Raman scattering
heterostructure

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10.1021/nl102316b

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abstract = "We report the direct detection of hole accumulation in the core of Ge-Si core-shell nanowire heterostructures by a Fano resonance between free holes and the F2g mode in Raman spectra. Raman enhancements of 10-10 000 with respect to bulk were observed and explained using finite difference time domain simulations of the electric fields concentrated in the nanowire. Numerical modeling of the radial carrier concentration revealed that the asymmetric line-shape is strongly influenced by inhomogeneous broadening.",

keywords = "Fano resonance, Nanowire, Raman scattering, heterostructure",

author = "Shixiong Zhang and Lopez, {Francisco J.} and Hyun, {Jerome K.} and Lauhon, {Lincoln J.}",

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AU - Lopez, Francisco J.

AU - Hyun, Jerome K.

AU - Lauhon, Lincoln J.

PY - 2010/11/10

Y1 - 2010/11/10

N2 - We report the direct detection of hole accumulation in the core of Ge-Si core-shell nanowire heterostructures by a Fano resonance between free holes and the F2g mode in Raman spectra. Raman enhancements of 10-10 000 with respect to bulk were observed and explained using finite difference time domain simulations of the electric fields concentrated in the nanowire. Numerical modeling of the radial carrier concentration revealed that the asymmetric line-shape is strongly influenced by inhomogeneous broadening.

AB - We report the direct detection of hole accumulation in the core of Ge-Si core-shell nanowire heterostructures by a Fano resonance between free holes and the F2g mode in Raman spectra. Raman enhancements of 10-10 000 with respect to bulk were observed and explained using finite difference time domain simulations of the electric fields concentrated in the nanowire. Numerical modeling of the radial carrier concentration revealed that the asymmetric line-shape is strongly influenced by inhomogeneous broadening.

KW - Fano resonance

KW - Nanowire

KW - Raman scattering

KW - heterostructure

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JO - Nano Letters

JF - Nano Letters

IS - 11

ER -

Direct detection of hole gas in Ge-Si core-shell nanowires by enhanced Raman scattering

Abstract

Keywords

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