Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi-Layer MoS2 Growth

Tae Soo Kim, Gichang Noh, Seongdae Kwon, Ji Yoon Kim, Krishna P. Dhakal, Saeyoung Oh, Hyun Jun Chai, Eunpyo Park, In Soo Kim, Eunji Lee, Youngbum Kim, Jaehyun Lee, Min kyung Jo, Minsoo Kang, Cheolmin Park, Jeongho Kim, Jeongwon Park, Suhyun Kim, Mingyu Kim, Yuseok KimSung Yool Choi, Seungwoo Song, Hu Young Jeong, Jeongyong Kim, Joon Young Kwak, Kibum Kang

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

2D MoS2 has gained attention for the post-silicon material owing to its atomically thin nature and dangling bond-free surface. The bi-layer MoS2 is considered a promising material for electronic devices due to its better electrical properties than monolayer MoS2. However, the uniform growth of bi-layer MoS2 is still challenging. Herein, the uniform growth of bi-layer MoS2 is demonstrated using gas-phase alkali metal-assisted metal–organic chemical vapor deposition (GAA-MOCVD). Thanks to enhanced metal reactant diffusion length in GAA-MOCVD, the uniform growth of bi-layer MoS2 film is achieved even at fast nucleation kinetics for a shorter growth time compared to previously reported MOCVD. The bi-layer MoS2 field-effect transistors (FETs) show superior electrical properties such as sheet conductance and electron mobility than monolayer MoS2 FETs. The electron mobility of bi-layer MoS2 FETs with bismuth contacts reaches a maximum of 92.35 cm2 V−1 s−1. Using the partially grown epitaxial bi-layer (PGEB) MoS2, it is demonstrated that a photodetector showed a near-infrared photoresponse with a low dark current that is advantageous for both monolayer and bi-layer applications. The potential expansion of the growth technique to layer-by-layer growth can result in boosted performance across a wide spectrum of electronic and optoelectronic devices employing MoS2.

Original languageEnglish
Article number2312365
JournalAdvanced Functional Materials
Volume34
Issue number23
DOIs
StatePublished - 6 Jun 2024

Bibliographical note

Publisher Copyright:
© 2024 Wiley-VCH GmbH.

Keywords

  • 2D materials
  • bi-layer growth
  • gas-phase alkali metal
  • metal–organic chemical vapor deposition
  • transition metal dichalcogenides

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