Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode

Hyeokjae Lee, Ji Min Park, Dongwoo Bae, Kiseok Kim, Jae Young Noh, Youngboo Kim, Jisun Park, Hyungsoon Shin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Semiconductor devices failed by cosmic radiation have not been analyzed as extensively and systematically as ESD/EOS. In this paper, the SEB phenomena by irradiation stress is not sufficiently explained by the existing method, so we supplemented it to explain the failure mechanism. For this reason, the fail region was analyzed in detail, and based on the analyzed result, the failure phenomenon in a wide area was analyzed, and this was reflected and explained by applying it to the TCAD simulation.

Original languageEnglish
Title of host publication7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publicationStrengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350332520
DOIs
StatePublished - 2023
Event7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of
Duration: 7 Mar 202310 Mar 2023

Publication series

Name7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/TerritoryKorea, Republic of
CitySeoul
Period7/03/2310/03/23

Bibliographical note

Funding Information:
This research was supported by next generation intelligence semiconductor foundation (Project Number: 20010288). Authors also would like to thank General Analysis (GA) business unit of QRT Inc. for their help at physical analysis of device.

Publisher Copyright:
© 2023 IEEE.

Keywords

  • physical analysis
  • radiation damage
  • single event burnout (SEB
  • TCAD simulation

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