Abstract
Semiconductor devices failed by cosmic radiation have not been analyzed as extensively and systematically as ESD/EOS. In this paper, the SEB phenomena by irradiation stress is not sufficiently explained by the existing method, so we supplemented it to explain the failure mechanism. For this reason, the fail region was analyzed in detail, and based on the analyzed result, the failure phenomenon in a wide area was analyzed, and this was reflected and explained by applying it to the TCAD simulation.
Original language | English |
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Title of host publication | 7th IEEE Electron Devices Technology and Manufacturing Conference |
Subtitle of host publication | Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9798350332520 |
DOIs | |
State | Published - 2023 |
Event | 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 7 Mar 2023 → 10 Mar 2023 |
Publication series
Name | 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 |
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Conference
Conference | 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 |
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Country/Territory | Korea, Republic of |
City | Seoul |
Period | 7/03/23 → 10/03/23 |
Bibliographical note
Publisher Copyright:© 2023 IEEE.
Keywords
- TCAD simulation
- physical analysis
- radiation damage
- single event burnout (SEB