Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode

Hyeokjae Lee; Ji Min Park; Dongwoo Bae; Kiseok Kim; Jae Young Noh; Youngboo Kim; Jisun Park; Hyungsoon Shin

doi:10.1109/EDTM55494.2023.10102988

Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode

Hyeokjae Lee, Ji Min Park, Dongwoo Bae, Kiseok Kim, Jae Young Noh, Youngboo Kim, Jisun Park, Hyungsoon Shin

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Semiconductor devices failed by cosmic radiation have not been analyzed as extensively and systematically as ESD/EOS. In this paper, the SEB phenomena by irradiation stress is not sufficiently explained by the existing method, so we supplemented it to explain the failure mechanism. For this reason, the fail region was analyzed in detail, and based on the analyzed result, the failure phenomenon in a wide area was analyzed, and this was reflected and explained by applying it to the TCAD simulation.

Original language	English
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10102988
State	Published - 2023
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 7 Mar 2023 → 10 Mar 2023

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	7/03/23 → 10/03/23

Keywords

physical analysis
radiation damage
single event burnout (SEB
TCAD simulation

Access to Document

10.1109/EDTM55494.2023.10102988

Cite this

Lee, H., Park, J. M., Bae, D., Kim, K., Noh, J. Y., Kim, Y., Park, J., & Shin, H. (2023). Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10102988

Lee, Hyeokjae ; Park, Ji Min ; Bae, Dongwoo et al. / Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

@inproceedings{0a428797b72e4c6596cd16dc8c7b2a5a,

title = "Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode",

abstract = "Semiconductor devices failed by cosmic radiation have not been analyzed as extensively and systematically as ESD/EOS. In this paper, the SEB phenomena by irradiation stress is not sufficiently explained by the existing method, so we supplemented it to explain the failure mechanism. For this reason, the fail region was analyzed in detail, and based on the analyzed result, the failure phenomenon in a wide area was analyzed, and this was reflected and explained by applying it to the TCAD simulation.",

keywords = "physical analysis, radiation damage, single event burnout (SEB, TCAD simulation",

author = "Hyeokjae Lee and Park, {Ji Min} and Dongwoo Bae and Kiseok Kim and Noh, {Jae Young} and Youngboo Kim and Jisun Park and Hyungsoon Shin",

note = "Funding Information: This research was supported by next generation intelligence semiconductor foundation (Project Number: 20010288). Authors also would like to thank General Analysis (GA) business unit of QRT Inc. for their help at physical analysis of device. Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10102988",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",

}

Lee, H, Park, JM, Bae, D, Kim, K, Noh, JY, Kim, Y, Park, J & Shin, H 2023, Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 7/03/23. https://doi.org/10.1109/EDTM55494.2023.10102988

Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode. / Lee, Hyeokjae; Park, Ji Min; Bae, Dongwoo et al.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode

AU - Lee, Hyeokjae

AU - Park, Ji Min

AU - Bae, Dongwoo

AU - Kim, Kiseok

AU - Noh, Jae Young

AU - Kim, Youngboo

AU - Park, Jisun

AU - Shin, Hyungsoon

N1 - Funding Information: This research was supported by next generation intelligence semiconductor foundation (Project Number: 20010288). Authors also would like to thank General Analysis (GA) business unit of QRT Inc. for their help at physical analysis of device. Publisher Copyright: © 2023 IEEE.

PY - 2023

Y1 - 2023

N2 - Semiconductor devices failed by cosmic radiation have not been analyzed as extensively and systematically as ESD/EOS. In this paper, the SEB phenomena by irradiation stress is not sufficiently explained by the existing method, so we supplemented it to explain the failure mechanism. For this reason, the fail region was analyzed in detail, and based on the analyzed result, the failure phenomenon in a wide area was analyzed, and this was reflected and explained by applying it to the TCAD simulation.

AB - Semiconductor devices failed by cosmic radiation have not been analyzed as extensively and systematically as ESD/EOS. In this paper, the SEB phenomena by irradiation stress is not sufficiently explained by the existing method, so we supplemented it to explain the failure mechanism. For this reason, the fail region was analyzed in detail, and based on the analyzed result, the failure phenomenon in a wide area was analyzed, and this was reflected and explained by applying it to the TCAD simulation.

KW - physical analysis

KW - radiation damage

KW - single event burnout (SEB

KW - TCAD simulation

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U2 - 10.1109/EDTM55494.2023.10102988

DO - 10.1109/EDTM55494.2023.10102988

M3 - Conference contribution

AN - SCOPUS:85158092011

T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

BT - 7th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023

Y2 - 7 March 2023 through 10 March 2023

ER -

Lee H, Park JM, Bae D, Kim K, Noh JY, Kim Y et al. Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10102988

Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode

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