Abstract
In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the VTH shift of the (N + 2)th erased state cell is larger than that of the (N + 1)th erased state cell if it is assumed that the channel of the Nth cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.
Original language | English |
---|---|
Article number | 5970109 |
Pages (from-to) | 3626-3629 |
Number of pages | 4 |
Journal | IEEE Transactions on Electron Devices |
Volume | 58 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2011 |
Bibliographical note
Funding Information:Manuscript received October 14, 2010; revised May 27, 2011 and June 26, 2011; accepted June 22, 2011. Date of publication August 1, 2011; date of current version September 21, 2011. This work was supported by Samsung Electronics Corporation. The review of this brief was arranged by Editor R. Huang.
Keywords
- Cell-to-cell interference
- drain-induced barrier lowering (DIBL)
- gate-induced drain leakage (GIDL)
- hot-carrier injection (HCI)
- nand string