In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the VTH shift of the (N + 2)th erased state cell is larger than that of the (N + 1)th erased state cell if it is assumed that the channel of the Nth cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.
Bibliographical noteFunding Information:
Manuscript received October 14, 2010; revised May 27, 2011 and June 26, 2011; accepted June 22, 2011. Date of publication August 1, 2011; date of current version September 21, 2011. This work was supported by Samsung Electronics Corporation. The review of this brief was arranged by Editor R. Huang.
- Cell-to-cell interference
- drain-induced barrier lowering (DIBL)
- gate-induced drain leakage (GIDL)
- hot-carrier injection (HCI)
- nand string