DIBL-induced program disturb characteristics in 32-nm NAND flash memory array

Myounggon Kang, Wookghee Hahn, Il Han Park, Juyoung Park, Youngsun Song, Hocheol Lee, Changgyu Eun, Sanghyun Ju, Kihwan Choi, Youngho Lim, Seunghyun Jang, Seongjae Cho, Byung Gook Park, Hyungcheol Shin

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the VTH shift of the (N + 2)th erased state cell is larger than that of the (N + 1)th erased state cell if it is assumed that the channel of the Nth cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.

Original languageEnglish
Article number5970109
Pages (from-to)3626-3629
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - Oct 2011

Bibliographical note

Funding Information:
Manuscript received October 14, 2010; revised May 27, 2011 and June 26, 2011; accepted June 22, 2011. Date of publication August 1, 2011; date of current version September 21, 2011. This work was supported by Samsung Electronics Corporation. The review of this brief was arranged by Editor R. Huang.


  • Cell-to-cell interference
  • drain-induced barrier lowering (DIBL)
  • gate-induced drain leakage (GIDL)
  • hot-carrier injection (HCI)
  • nand string


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