Diameter and polarization-dependent raman scattering intensities of semiconductor nanowires

Francisco J. Lopez; Jerome K. Hyun; Uri Givan; In Soo Kim; Aaron L. Holsteen; Lincoln J. Lauhon

doi:10.1021/nl204537d

Diameter and polarization-dependent raman scattering intensities of semiconductor nanowires

Francisco J. Lopez, Jerome K. Hyun, Uri Givan, In Soo Kim, Aaron L. Holsteen, Lincoln J. Lauhon

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Diameter-dependent Raman scattering in single tapered silicon nanowires is measured and quantitatively reproduced by modeling with finite-difference time-domain simulations. Single crystal tapered silicon nanowires were produced by homoepitaxial radial growth concurrent with vapor-liquid-solid axial growth. Multiple electromagnetic resonances along the nanowire induce broad band light absorption and scattering. Observed Raman scattering intensities for multiple polarization configurations are reproduced by a model that accounts for the internal electromagnetic mode structure of both the exciting and scattered light. Consequences for the application of Stokes to anti-Stokes intensity ratio for the estimation of lattice temperature are discussed.

Original language	English
Pages (from-to)	2266-2271
Number of pages	6
Journal	Nano Letters
Volume	12
Issue number	5
DOIs	https://doi.org/10.1021/nl204537d
State	Published - 9 May 2012

Keywords

FDTD
Nanowire
Raman
modeling
optical properties

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10.1021/nl204537d

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title = "Diameter and polarization-dependent raman scattering intensities of semiconductor nanowires",

abstract = "Diameter-dependent Raman scattering in single tapered silicon nanowires is measured and quantitatively reproduced by modeling with finite-difference time-domain simulations. Single crystal tapered silicon nanowires were produced by homoepitaxial radial growth concurrent with vapor-liquid-solid axial growth. Multiple electromagnetic resonances along the nanowire induce broad band light absorption and scattering. Observed Raman scattering intensities for multiple polarization configurations are reproduced by a model that accounts for the internal electromagnetic mode structure of both the exciting and scattered light. Consequences for the application of Stokes to anti-Stokes intensity ratio for the estimation of lattice temperature are discussed.",

keywords = "FDTD, Nanowire, Raman, modeling, optical properties",

author = "Lopez, \{Francisco J.\} and Hyun, \{Jerome K.\} and Uri Givan and Kim, \{In Soo\} and Holsteen, \{Aaron L.\} and Lauhon, \{Lincoln J.\}",

year = "2012",

month = may,

day = "9",

doi = "10.1021/nl204537d",

language = "English",

volume = "12",

pages = "2266--2271",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "5",

}

TY - JOUR

T1 - Diameter and polarization-dependent raman scattering intensities of semiconductor nanowires

AU - Lopez, Francisco J.

AU - Hyun, Jerome K.

AU - Givan, Uri

AU - Kim, In Soo

AU - Holsteen, Aaron L.

AU - Lauhon, Lincoln J.

PY - 2012/5/9

Y1 - 2012/5/9

N2 - Diameter-dependent Raman scattering in single tapered silicon nanowires is measured and quantitatively reproduced by modeling with finite-difference time-domain simulations. Single crystal tapered silicon nanowires were produced by homoepitaxial radial growth concurrent with vapor-liquid-solid axial growth. Multiple electromagnetic resonances along the nanowire induce broad band light absorption and scattering. Observed Raman scattering intensities for multiple polarization configurations are reproduced by a model that accounts for the internal electromagnetic mode structure of both the exciting and scattered light. Consequences for the application of Stokes to anti-Stokes intensity ratio for the estimation of lattice temperature are discussed.

AB - Diameter-dependent Raman scattering in single tapered silicon nanowires is measured and quantitatively reproduced by modeling with finite-difference time-domain simulations. Single crystal tapered silicon nanowires were produced by homoepitaxial radial growth concurrent with vapor-liquid-solid axial growth. Multiple electromagnetic resonances along the nanowire induce broad band light absorption and scattering. Observed Raman scattering intensities for multiple polarization configurations are reproduced by a model that accounts for the internal electromagnetic mode structure of both the exciting and scattered light. Consequences for the application of Stokes to anti-Stokes intensity ratio for the estimation of lattice temperature are discussed.

KW - FDTD

KW - Nanowire

KW - Raman

KW - modeling

KW - optical properties

UR - https://www.scopus.com/pages/publications/84861078822

U2 - 10.1021/nl204537d

DO - 10.1021/nl204537d

M3 - Article

C2 - 22497202

AN - SCOPUS:84861078822

SN - 1530-6984

VL - 12

SP - 2266

EP - 2271

JO - Nano Letters

JF - Nano Letters

IS - 5

ER -

Diameter and polarization-dependent raman scattering intensities of semiconductor nanowires

Abstract

Keywords

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