Abstract
The Poisson ratio ν of In 2O 3 has been determined by measurement of the covariation of in-plane and out-of-plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO 2 substrates. The experimental results are in good agreement with values for ν calculated using atomistic simulation procedures.
| Original language | English |
|---|---|
| Article number | 233301 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 84 |
| Issue number | 23 |
| DOIs | |
| State | Published - 1 Dec 2011 |