Detection of hidden localized states by the quantum Hall effect in graphene

Tuan Khanh Chau, Dongseok Suh, Haeyong Kang

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We fabricated a monolayer graphene transistor device in the shape of the Hall-bar structure, which produced an exactly symmetric signal following the sample geometry. During electrical characterization, the device showed the standard integer quantum Hall effect of monolayer graphene except for a broader range of several quantum Hall plateaus corresponding to small filling factors in the electron region. We investigated this anomaly on the basis of localized states owing to the presence of possible electron traps, whose energy levels were estimated to be near the Dirac point. In particular, the inequality between the filling of electrons and holes was ascribed to the requirement of excess electrons to fill the trap levels. The relations between the quantum Hall plateau, Landau level, and filling factor were carefully analyzed to reveal the details of the localized states in this graphene device.

Original languageEnglish
Pages (from-to)26-29
Number of pages4
JournalCurrent Applied Physics
StatePublished - Mar 2021

Bibliographical note

Publisher Copyright:
© 2021 Korean Physical Society


  • Charge traps
  • Graphene
  • Quantum Hall effect
  • Quantum Hall plateau broadening


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